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Emerging NVM Circuit Techniques and Implementations for Energy-Efficient Systems

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Beyond-CMOS Technologies for Next Generation Computer Design

Abstract

This chapter addresses emerging resistive nonvolatile memory (NVM) circuit design techniques and implementations for energy-efficient systems. First we introduce emerging memory technologies, including resistive RAM (ReRAM), phase change memory (PCM), and spin-torque transfer magnetic RAM (STT-MRAM). Next, we examine circuit design challenges for read and write operations, and review some of the advanced circuit techniques. Lastly, we discuss the implementation for energy-efficient systems with nonvolatile logic and nonvolatile SRAM using emerging resistive NVM.

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Acknowledgements

The authors would like to thank MXIC, TSMC, and ITRI for their supports.

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Authors and Affiliations

  1. National Tsing-Hua University, Hsinchu, Taiwan

    Win-San Khwa, Chun-Meng Dou & Meng-Fan Chang

  2. National Cheng-Kung University, Tainan, Taiwan

    Darsen Lu

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Correspondence to Meng-Fan Chang .

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  1. IBM, Hopewell Junction, New York, USA

    Rasit O. Topaloglu

  2. Department of Electrical Engineering, Stanford University, Stanford, California, USA

    H.-S. Philip Wong

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Khwa, WS., Lu, D., Dou, CM., Chang, MF. (2019). Emerging NVM Circuit Techniques and Implementations for Energy-Efficient Systems. In: Topaloglu, R., Wong, HS. (eds) Beyond-CMOS Technologies for Next Generation Computer Design . Springer, Cham. https://doi.org/10.1007/978-3-319-90385-9_4

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