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Ultra-Low Power Application-Specific Integrated Circuits for Sensing

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Implantable Sensors and Systems

Abstract

In the quest for ever-reducing system size and increased integration and functionality, application-specific integrated circuit (ASIC) technology plays a pivotal role in modern implants, where custom circuits designed at transistor and device levels are replacing off-the-shelf commercial chips and bulky benchtop systems. Recently, commercial system-on-chip (SoC) devices encompassing digital microcontrollers, radio, and analog–digital converters, as well as reconfigurable amplifier circuits, are widely available. Despite this, further development of ASIC -specific implantable systems is required, particularly in the area of multi-channel array sensor interfaces, ultra-low power data acquisition, and circuits that work with specialized micro-sensors for implants. ASICs designed to focus on a particular application have given designers the freedom to optimize power consumption for a set task, unlike general-purpose SoCs that have to cater for a wide range of applications and hence typically consume more power. In this chapter, we begin with a survey on the latest development of ASICs and related integrated systems from literature. This is followed by an overview of technological trends in integrated circuit/sensor fabrication and fusion. The rest of the chapter focuses on a number of engineering aspects related to ultra-low power ASIC circuits appropriate for implantable sensors and sensor front-ends, covering bioimpedance , neural and electrochemical sensor measurement circuits, as well as low-power analog-to-digital converter design and architectures.

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Abbreviations

AAP:

Axon action potentials

AC:

Alternating current

ACFB:

Autocorrelation feedback

ADC:

Analog-to-digital converter

AGC:

Automatic gain control

APS:

Active pixel sensors

ASIC:

Application specific integrated circuit

AZ:

Auto-zeroing

BIST:

Built-in self-test

BJT:

Bipolar junction transistor

BPF:

Bandpass filter

CDS:

Correlated double sampling

CHS:

Chopper stabilization

CMFB:

Common-mode feedback

CMOS:

Complementary metal-oxide semiconductor

CMRR:

Common-mode rejection ratio

CMS:

Correlated multiple sampling

CNS:

Central nervous systems

CORDIC:

Coordinate rotation digital computer

CS:

Compressed sensing

CTAT:

Complementary-to-absolute-temperature

CT ΔΣ:

Continuous-time ΔΣ-modulator

CV:

Cyclic voltammetry

DAC:

Digital-to-analog converter

DBS:

Deep brain stimulation

DC:

Direct current

DDA:

Differential difference amplifier

DDS:

Direct digital synthesizer

DNA:

Deoxyribonucleic acid

DSP:

Digital signal processing

DT ΔΣ:

Discrete-time ΔΣ-modulator

ECoG:

Electrocorticography

ECG:

Electrocardiography

EEG:

Electroencephalography

EIT:

Electrical impedance tomography

EMG:

Electromyography

EMI:

Electromagnetic interference

ENG:

Electroneurography

EOG:

Electrooculography

ESD:

Electrostatic discharge

FBVA:

Feedback voltage attenuation

FET:

Field-effect transistor

FFCA:

Feedforward current attenuation

FFVA:

Feedforward voltage attenuation

FGMOS:

Floating gate MOS

FIR:

Finite impulse response

FPAA:

Field-programmable analog array

FPGA:

Field-programmable gated array

FS:

Frequency span

FSCV:

Fast scan cyclic voltammetry

FSK:

Frequency shift keying

HD3:

Third order harmonic distortion

HPF:

High-pass filter

IA:

Instrumentation amplifier

IC:

Inversion coefficient

IF-ADC:

Integrate and fire ADC

IIR:

Infinite impulse response

KCL:

Kirchhoff’s current law

LFP:

Local field potential

LNA:

Low noise amplifier

LPF:

Low-pass filter

LSB:

Least significant bit

LUT:

Lookup table

MEMS:

Micro-electro-mechanical system

MOSFET:

Metal-oxide field effect transistor

MSB:

Most significant bit

NEF:

Noise efficiency factor

OOS:

Output offset storage

OSR:

Oversampling ratio

op-amp:

Operational amplifier

OTA:

Operational transconductance amplifier

PEF:

Power efficiency factor

PGA:

Programmable gain amplifier

PND:

P+ non-salicide diffusion

PNS:

Peripheral nervous systems

PSD:

Power spectral density

PSRR:

Power supply rejection ratio

PTAT:

Positive-to-absolute-temperature

PWV:

Pulse wave velocity

Q:

Quality factor

RMS:

Root-mean-square

ROM:

Read-only memory

S:

Slope

SAR:

Successive approximation register

SC:

Switched capacitor

SCCMOS:

Super cutoff CMOS

SD:

Synchronous detection

SFDR:

Spurious-free dynamic range

SNR:

Signal to noise ratio

SoC:

System-on-chip

TC:

Temperature coefficient

TCN:

Negative temperature coefficient

TCP:

Positive temperature coefficient

TDC:

Time-to-digital converter

TEM:

Time-encoding machine

THD:

Total harmonic distortion

TI:

Transimpedance

TIA:

Transimpedance amplifier

TSC:

Triangle-to-sine converter

TSV:

Through-silicon-vias

VCCS:

Voltage-controlled current source

VFC:

Voltage-to-frequency converter

VVR:

Voltage variable resistor

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    P. Kassanos, H. Ip & Guang-Zhong Yang

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Kassanos, P., Ip, H., Yang, GZ. (2018). Ultra-Low Power Application-Specific Integrated Circuits for Sensing. In: Yang, GZ. (eds) Implantable Sensors and Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-69748-2_5

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