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Bandgap Engineering of Quantum Semiconductor Microstructures

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Handbook of Laser Micro- and Nano-Engineering

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Abstract

The continuous progress in advancing thin films growth methods has enabled fabrication of innovative devices based on semiconductor microstructures. The epitaxial growth techniques, such as molecular beam epitaxy, chemical beam epitaxy, metal-organic chemical vapor deposition, and numerous derivatives of these techniques have made the films and microstructures based on Si, Si/SiGe, GaAs. GaAs/AlGaAs and other group IV-IV, III-V, II-V, and II-VI semiconductors readily available for research and commercial applications. Nevertheless, the output of these techniques has frequently proven limited when considering fabrication of microstructures with interfaces controlled at the atomic level, the integration of different bandgap materials within the same wafer or fabrication of microstructures having arbitrary profiles of their bandgaps either in the plane of the growth or in the direction of the growth. Some of these challenging problems have been resolved by taking advantage of the technology of infrared (IR) and ultraviolet (UV) which allowed delivering microstructures with characteristics unattainable with conventional methods of fabrication. This chapter provides a review of the laser-based methods for fabrication of quantum semiconductor microstructures with bandgap engineered at the atomic level. The discussion involves bandgap engineering by pulsed laser deposition and quantum well/quantum dot intermixing techniques employing IR and UV lasers for the general area of application concerning monolithically integrated photonic devices.

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Authors and Affiliations

  1. Interdisciplinary Institute for Technological Innovation (3IT), Department of Electrical and Computer Engineering, Faculty of Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 0A5, Canada

    Jan J. Dubowski

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  1. Jan J. Dubowski
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Correspondence to Jan J. Dubowski .

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  1. RIKEN-SIOM Joint Research Unit, RIKEN Center for Advanced Photonics RIKEN-SIOM Joint Research Unit, Wako, Saitama, Japan

    Koji Sugioka

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    Andreas Ostendorf

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    Alexander Kanitz

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Dubowski, J.J. (2020). Bandgap Engineering of Quantum Semiconductor Microstructures. In: Sugioka, K. (eds) Handbook of Laser Micro- and Nano-Engineering. Springer, Cham. https://doi.org/10.1007/978-3-319-69537-2_29-1

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  • DOI: https://doi.org/10.1007/978-3-319-69537-2_29-1

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