Abstract
The curvature relaxation technique is a new, electrode-free, in situ technique for simultaneously measuring the chemical oxygen surface exchange coefficient (k) and stress state \(\left( \lambda \right)\) of a thin or thick, dense or porous mechano-chemically active film atop a dense inert substrate. This chapter presents (1) an overview of the technique, (2) a detailed derivation of the fitting equations used to extract k from curvature relaxation experiments, (3) a discussion of the technique’s benefits and limitations, and (4) sample MATLAB code to predict the stress distributions found within dense thin or thick film bilayers as a function of temperature.
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Abbreviations
- \(\alpha\) :
-
Optical adsorption coefficient
- \(\alpha_{\text{c}}\) :
-
Volumetric chemical expansion coefficient
- \(\alpha_{{{\text{t}}_{\text{f}} }}\) :
-
Film thermal expansion coefficient
- \(\alpha_{{{\text{t}}_{\text{S}} }}\) :
-
Substrate thermal expansion coefficient
- \(A_{i}\) :
-
Surface area fraction over which process i occurs
- \(\beta_{m}\) :
-
mth root of Eq. 5.13
- \(c\) :
-
Instantaneous film oxygen vacancy concentration
- \(c_{\text{o}}\) :
-
Original film oxygen vacancy concentration
- \(c_{\infty }\) :
-
New, \({p\text{O}}_{ 2}\)-equilibrated film oxygen vacancy concentration
- \(c\left( {x,t} \right)\) :
-
Film oxygen vacancy concentration as a function of position and time
- \(\delta\) :
-
Oxygen nonstoichiometry
- \(\Delta\) :
-
Difference in
- \(d\) :
-
CCD-detected laser beam array inter-spot spacing
- \(d_{\text{o}}\) :
-
Inter-spot spacing for the parallel beams in the original, unreflected laser array
- \(D\) :
-
Oxygen vacancy diffusivity
- \(\epsilon_{\text{c}}\) :
-
Volumetric chemically induced film strain
- \(\epsilon_{\text{c}} (t)\) :
-
Volumetric chemically induced film strain at time t
- \(\epsilon_{{\text{c}\infty }}\) :
-
New, \({p\text{O}}_{ 2}\)-equilibrated, volumetric chemically induced film strain
- \(\epsilon_{\text{f}}\) :
-
Film strain
- \(\epsilon_{\text{t}}\) :
-
Thermal mismatch strain
- \(E_{\text{f}}\) :
-
Film Young’s modulus
- \(E_{\text{S}}\) :
-
Substrate Young’s modulus
- \(h_{\text{f}}\) :
-
Film thickness
- \(h_{\text{S}}\) :
-
Substrate thickness
- \(J\) :
-
Oxygen flux
- \(\kappa\) :
-
Curvature
- \(\kappa R\) :
-
Curvature relaxation
- \(\kappa (t)\) :
-
Sample curvature at time t
- \(\kappa_{\text{o}}\) :
-
Initial sample curvature
- \(\kappa_{\infty }\) :
-
New, \({p\text{O}}_{ 2}\)-equilibrated sample curvature
- k :
-
Chemical oxygen surface exchange coefficient
- \(\lambda\) :
-
Stress state
- \(\lambda_{\text{c}}\) :
-
Chemically induced stress
- \(\lambda_{\text{f}}\) :
-
Absolute film stress
- \(\lambda_{\text{f}} (t)\) :
-
Film stress at time t
- \(\lambda_{\text{o}}\) :
-
Initial film stress
- \(\lambda_{{{\text{f}}\infty }}\) :
-
New \({p\text{O}}_{ 2}\)-equilibrated film stress
- \(\bar{\lambda }_{\text{St}}\) :
-
Film stress predicted from Stoney’s equation
- \(\lambda_{\text{t}}\) :
-
Thermal expansion mismatch stress
- L :
-
Sample to CCD distance
- \(L_{\text{c}}\) :
-
Characteristic thickness for oxygen transport
- LSF64:
-
La0.6Sr0.4FeO3−δ
- \(M_{i}\) :
-
Electrical mobility of species i
- \(M_{\text{f}}\) :
-
Film biaxial modulus
- \(M_{\text{S}}\) :
-
Substrate biaxial modulus
- \(N\) :
-
Number of oxygen atoms per formula unit of non-defective material
- \({p\text{O}}_{ 2}\) :
-
Oxygen partial pressure
- \(q_{i}\) :
-
Electrical charge of species i
- \(\sigma\) :
-
Total electrical conductivity
- \(S_{\text{P}}\) :
-
Total surface area of the pores in a porous film
- SOEC:
-
Solid oxide electrolysis cell
- SOFC:
-
Solid oxide fuel cell
- \(\theta\) :
-
Laser beam array angle of reflection
- t :
-
Time
- T :
-
Temperature
- \(\upsilon_{\text{f}}\) :
-
Film Poisson’s ratio
- \(\upsilon_{\text{S}}\) :
-
Substrate Poisson’s ratio
- \(V\) :
-
Final volume
- \(V^{*}\) :
-
Instantaneous unit cell volume divided by the number of formula units per non-defective unit cell
- \(V_{\text{o}}\) :
-
Initial volume
- \(V_{\text{S}}\) :
-
Total volume of the solid material in a porous film
- \(x\) :
-
Distance from the film–substrate interface
- YSZ:
-
Yttria stabilized zirconia
- \(\zeta\) :
-
Film molar optical extinction coefficient
- z :
-
Film-normal distance from the substrate mid-plane
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Acknowledgements
This work was supported by United States National Science Foundation CAREER Award No. CBET-1254453. The author would like to thank Mr. Eric Straley for providing the Appendix 1 MATLAB code.
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Appendices
Appendix 1: Sample Film Stress and Bilayer Curvature MATLAB Code
Appendix 2: Relating Normalized Oxygen Concentration and Film Strain Changes
Based on the relationship between the instantaneous oxygen vacancy concentration (c), the number of oxygen atoms per formula unit of non-defective material (N, which is 3 for ABO3 perovskite materials), the oxygen nonstoichiometry (\(\delta\), which is defined as the number of oxygen atoms missing per formula unit of material) and the volume occupied by one formula unit of material (\(V^{*}\), which is equal to the unit cell volume for materials such as ABO3 perovskites which contain 1 formula unit per unit cell), i.e.,
the difference between an instantaneous and original oxygen vacancy concentration that exists at a particular point within an oxygen exchange material that is equilibrating to a new \({p\text{O}}_{ 2}\):
where the naught subscript denotes the original state of the material. Applying the fact that:
results in:
Rearranging and applying the linear relationship between δ, the volumetric chemical strain \(( \epsilon_{\text{c}} )\), and the volumetric chemical expansion coefficient \((\alpha_{\text{c}} )\) i.e.,
results in:
Combining the first two right-hand terms and factoring out a \(- \left( {N - \delta_{\text{o}} } \right)\) results in:
Applying the definition of volumetric chemical strain , i.e.,
results in:
Factoring out a \(- \frac{{\epsilon_{\text{c}} }}{{\alpha_{\text{c}} V^{*} }}\) results in:
Performing the same analysis on \(c_{\infty } - c_{\text{o}}\) with the assumption that the final and instantaneous values of the film strain and cell volume per formula unit can be different, but that the chemical expansion coefficient is constant yields:
where \(\epsilon_{{\text{c},\infty }}\) and \(V_{\infty }^{*}\) are the final amount of strain, and the final unit cell per formula unit, in the material. Therefore:
Substituting rearranged versions of the definition of volumetric chemical strain , i.e.,
yields:
Distributing the strain terms through the bracketed terms yields:
Since the strains encountered during a small \({p\text{O}}_{ 2}\) change are expected to be less than a few percent, the \(\epsilon_{\text{c}} \epsilon_{{\text{c},\infty }}\) terms are much smaller in magnitude than the \(\epsilon_{\text{c}}\) or \(\epsilon_{{\text{c},\infty }}\) terms with the result of that in a \(\kappa R\) experiment:
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Nicholas, J.D. (2017). In Situ Wafer Curvature Relaxation Measurements to Determine Surface Exchange Coefficients and Thermo-chemically Induced Stresses. In: Bishop, S., Perry, N., Marrocchelli, D., Sheldon, B. (eds) Electro-Chemo-Mechanics of Solids. Electronic Materials: Science & Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-51407-9_5
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