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Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes

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Recent Global Research and Education: Technological Challenges

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 519))

Abstract

Inter-band tunneling current is an attractive transport mechanism for future generations of electronics. However, this mechanism is limited by the momentum conservation law which requires phonon assistance in tunneling due to the indirect-bandgap nature of Si. Here, we show that in low-dimensional pn Esaki diodes, inter-band tunneling current can be enhanced by the resonance of discrete dopants with deepened energy levels. Current enhancement is comparable with the background direct inter-band tunneling and can be modulated by the applied biases, suggesting a pathway for controlling atomic-level resonances for practical purposes.

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Authors and Affiliations

  1. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, 432-8011, Japan

    Daniel Moraru & Michiharu Tabe

  2. Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, 923-1292, Japan

    Manoharan Muruganathan, Le The Anh & Hiroshi Mizuta

  3. Agency for Assessment and Application of Technology, South Tangerang, Indonesia

    Ratno Nuryadi

  4. Faculty of Physical Sciences and Engineering, University of Southampton, High Field, Southampton, SO17 1BJ, UK

    Hiroshi Mizuta

Authors
  1. Daniel Moraru
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  2. Manoharan Muruganathan
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  3. Le The Anh
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  4. Ratno Nuryadi
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  5. Hiroshi Mizuta
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  6. Michiharu Tabe
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Corresponding author

Correspondence to Daniel Moraru .

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Editors and Affiliations

  1. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Ryszard Jabłoński

  2. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Roman Szewczyk

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Moraru, D., Muruganathan, M., Anh, L.T., Nuryadi, R., Mizuta, H., Tabe, M. (2017). Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes. In: Jabłoński, R., Szewczyk, R. (eds) Recent Global Research and Education: Technological Challenges. Advances in Intelligent Systems and Computing, vol 519. Springer, Cham. https://doi.org/10.1007/978-3-319-46490-9_14

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  • DOI: https://doi.org/10.1007/978-3-319-46490-9_14

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-46489-3

  • Online ISBN: 978-3-319-46490-9

  • eBook Packages: EngineeringEngineering (R0)

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