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Die and Package Level Thermal and Thermal/Moisture Stresses in 3D Packaging: Modeling and Characterization

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3D Microelectronic Packaging

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 57))

Abstract

3D packaging employing through-silicon vias (TSVs) to connect multiple stacked dies/chips has great potential to achieve high performance and high capacity with low cost and low energy consumption. However, crucial reliability issues often arise in 3D integrated circuits (ICs) packaging due to high thermal stress and moisture stress at both die and package level. In this chapter, TSV-related reliability issues such as the measurement of thermal stress in TSV, the effect of thermal stress on carrier mobility and keep-out zone, thermal stress induced via extrusion are illustrated. At the package level, various analytical methods for thermal stress-induced warpage in multilayered structures are reviewed. The state-of-the-art approaches for warpage control are presented and validated by experimental testing and numerical modeling. Finally, to incorporate moisture stress that comprehends both hygroscopic stress and the pressure of water vapor, a theoretical framework is provided based on damage micromechanics and the effective stress concept. Some case studies are provided to understand the effect of moisture and vapor pressure.

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Abbreviations

α Cu :

CTE of copper

α si :

CTE of silicon

β :

Coefficient of hygroscopic swelling

σ θ :

Circumferential stress

σ r :

Radial stress

σ rz :

Shear stress in r–z plane

σ z :

Normal stress in z direction

σ T :

Mismatch thermal stress

Δω 3 :

Frequency shift of the longitudinal Raman mode

ΔH r :

Residual via extrusion

ΔT :

Thermal loading

ΔT y :

Critical thermal load for plastic yielding

ε c :

Hygroscopic strain

ε p :

Vapor pressure-induced strain

ε T :

Thermal strain

\( {\overline{\varepsilon}}_{\mathrm{T}} \) :

Average thermal strain

ϕ :

Porosity

\( \overset{.}{\phi } \) :

Porosity growth rate

γ e :

The rate of elastic extrusion

γ p :

The rate of plastic extrusion

η :

Generalized Poisson’s ratio

φ :

Normalized concentration or activity

κ :

Curvature

κ app :

Applied external curvature

κ nat :

Natural bending-induced curvature

ν :

Poisson’s ratio

π 11, π 12, π 44 :

Piezoresistance coefficients

ρ a :

Apparent moisture density

ρ g :

Density of saturated water vapor

a :

Via radius

A :

Geometry factor for calculating thermal stress in multilayered structure

C sat :

Saturated moisture concentration

d :

Via diameter

D :

Moisture diffusivity

D T :

Thermal diffusivity

E :

Young’s modulus

e :

Total volumetric strain

G and λ :

Lame’s elastic constants

H :

Via depth

h b :

Bending axis

h i :

Top surface coordinate

h m :

Midpoint coordinate

k P :

Factor for hydrostatic pressure gradient-driven diffusion

k T :

Factor for thermal gradient-driven diffusion

P :

Hydrostatic pressure

p :

Partial water vapor pressure

p amb :

Ambient partial water vapor pressure

p g :

Saturated water vapor pressure

Q :

Activation energy for moisture diffusivity

S :

Solubility

T m :

Maximum temperature during thermal cycling

T R :

Room temperature

T ref :

Stress-free temperature

u i :

Displacement vector

w :

Wetness

W :

Warpage

X i :

Body force vector

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Acknowledgment

The editors would like to thank Zhiheng Huang from Sun Yat-sen University in China for his critical review of this chapter.

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Authors and Affiliations

  1. Department of Mechanical Engineering, Lamar University, Beaumont, TX, 77710, USA

    Liangbiao Chen & Xuejun Fan

  2. Department of Material Science and Engineering, University of Central Florida, Orlando, FL, 32816, USA

    Tengfei Jiang

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  1. Liangbiao Chen
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  2. Tengfei Jiang
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Correspondence to Xuejun Fan .

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Editors and Affiliations

  1. Intel Corporation, Chandler, Arizona, USA

    Yan Li

  2. Intel Corporation, Chandler, Arizona, USA

    Deepak Goyal

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Chen, L., Jiang, T., Fan, X. (2017). Die and Package Level Thermal and Thermal/Moisture Stresses in 3D Packaging: Modeling and Characterization. In: Li, Y., Goyal, D. (eds) 3D Microelectronic Packaging. Springer Series in Advanced Microelectronics, vol 57. Springer, Cham. https://doi.org/10.1007/978-3-319-44586-1_12

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