Abstract
This chapter discusses fabrication and experimental evaluation of W(111) single atom tips (SATs) for gas field ion source applications. Firstly, a brief history of field ion microscopy (FIM) will be given since it will be heavily relied on throughout the text. We will discuss ion current generation in FIM and carry that knowledge over to fabricated SATs. Secondly, gas assisted etching and evaporation process will be discussed in detail. It will be shown that nanotip shape, and therefore SAT characteristics, can be controlled and modified to achieve desirable ion beam properties. Lastly, we will evaluate ion beam width as a function of tip voltage and temperature as examples of experimental efforts to better understand gas field ion source performance.
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Notes
- 1.
This is also true for an atomically defined (point) electron source.
- 2.
It should be noted that MCP gain can change (decreases) over time so the calibration should be performed periodically.
- 3.
Once a desired number of frames was collected, the oldest image was discarded and a newly acquired frame was added.
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Technical support of Mark Salomons and Martin Cloutier is greatly appreciated.
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Urban, R., Wolkow, R.A., Pitters, J.L. (2016). Single Atom Gas Field Ion Sources for Scanning Ion Microscopy. In: Hlawacek, G., Gölzhäuser, A. (eds) Helium Ion Microscopy. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-41990-9_2
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