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Swift Heavy Ion Irradiation of Crystalline Semiconductors

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Ion Beam Modification of Solids

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 61))

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Abstract

In this chapter the structural modification of crystalline semiconductors due to swift heavy ion (SHI) irradiation induced high electronic excitation is discussed. After a short description of the energy deposition processes, experimental results on ion track and damage formation in various semiconductors are presented. The results highlight the different susceptibility of the materials to SHI induced damage formation and the existence of material specific threshold values of the electronic energy deposition for track formation. The results are discussed in the framework of existing models and it is shown that the experimental data can be well described using an extended inelastic thermal spike model.

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Acknowledgements

The authors thank S. Klaumünzer, A. Kamarou and M.C. Ridway and his group for their valuable collaboration and the German Research Council (DFG), the Federal Ministry for Education and Research of Germany (BMBF) and the German Council for Academic Exchange (DAAD) for financial support.

Furthermore, the authors are very grateful to Marcel Toulemonde for valuable discussion concerning the applicability of the inelastic thermal spike model to describe track formation in semiconductors.

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  1. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743, Jena, Germany

    Werner Wesch & Claudia S. Schnohr

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  1. Institute of Solid State Physics, Friedrich-Schiller-University Jena, Jena, Germany

    Werner Wesch

  2. Institute of Solid State Physics, Friedrich-Schiller-University, Jena, Germany

    Elke Wendler

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Wesch, W., Schnohr, C.S. (2016). Swift Heavy Ion Irradiation of Crystalline Semiconductors. In: Wesch, W., Wendler, E. (eds) Ion Beam Modification of Solids. Springer Series in Surface Sciences, vol 61. Springer, Cham. https://doi.org/10.1007/978-3-319-33561-2_9

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