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Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials

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III-Nitride Ultraviolet Emitters

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 227))

Abstract

In this chapter, we show the impact of point defects rather than threading dislocations (TDs) on the emission dynamics of the near-band-edge (NBE) excitonic luminescence in AlN and high AlN mole fraction (x) Al x Ga1−x N alloy films using deep ultraviolet (DUV) time-resolved luminescence and positron annihilation measurements. The extreme radiative nature of excitons in AlN is identified, as the radiative lifetime (τ R) for a free excitonic emission was determined to be as short as 11 ps at 7 K and 180 ps at 300 K, which are the shortest ever reported for the spontaneous emission in bulk semiconductors. However, apparent τ R increased to 530 ps at 7 K with increasing impurity and Al-vacancy (V Al) concentrations irrespective of the TD density. The result reflects the contribution of bound exciton components. A continuous decrease in τ R with increasing temperature up to 200 K of heavily impurity-doped samples reflects a carrier release from band-tail states. The room temperature (RT) τ R of Al x Ga1−x N alloys of high x was nevertheless as short as a few ns at 300 K. The results essentially indicate an excellent radiative performance. Finally, the impact of Si-doping and the resulting cation vacancy formation on the nonradiative lifetime (τ NR) of the NBE emission in Al0.6Ga0.4N films are discussed.

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Acknowledgments

The authors thank Prof. T. Sota of Waseda Univ., Prof. B. Gil of Univ. Montpellier II, Prof. C. Weisbuch of Univ. California Santa Barbara, Dr. M. Tanaka, and Prof. S. Nakamura of Univ. California Santa Barbara for fruitful discussions. The first author is thankful to Dr. K. Furusawa for help with the experiments. This work was supported in part by NEDO programs under METI, Grant-in-Aids for Scientific Research Nos. 23656206 and 18069001 under MEXT, Japan, and AFOSR/AOARD Grant Nos. FA2386-11-1-4013 and FA2386-11-1-4108 monitored by Dr. G. Jessen. We finally thank Prof. Michael Kneissl for giving us a chance to contribute to this issue.

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Authors and Affiliations

  1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan

    Shigefusa F. Chichibu

  2. Department of Electrical and Electronic Engineering, Mie University, Tsu, 514-8507, Japan

    Hideto Miyake & Kazumasa Hiramtsu

  3. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan

    Akira Uedono

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  1. Shigefusa F. Chichibu
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Correspondence to Shigefusa F. Chichibu .

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  1. Institute of Solid state Physics, Technische Universität Berlin, Berlin, Germany

    Michael Kneissl

  2. Institute of Solid state Physics, Technische Universität Berlin, Berlin, Germany

    Jens Rass

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Chichibu, S.F., Miyake, H., Hiramtsu, K., Uedono, A. (2016). Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials. In: Kneissl, M., Rass, J. (eds) III-Nitride Ultraviolet Emitters. Springer Series in Materials Science, vol 227. Springer, Cham. https://doi.org/10.1007/978-3-319-24100-5_5

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