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Depth-Dependence of Electron Screening, Charge Carriers and Correlation: Theory and Experiments

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Hard X-ray Photoelectron Spectroscopy (HAXPES)

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 59))

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Abstract

Core-level Photoemission Spectroscopy (PES) has played a very important role in our understanding of the electronic structure of correlated transition metal and rare-earth compounds. The appearance of strong satellite structures accompanying the main PES spectra in correlated systems is well known, and systematic variations in the position and intensities of these satellites provide us with important clues to their electronic structures. In spite of these successes, the surface sensitivity of PES has often led to controversies regarding surface versus bulk electronic structure, and hence, hard X-ray photoelectron spectroscopy (HAXPES) is very important and promising. HAXPES is a bulk sensitive probe of the electronic structure due to its ability to overcome surface sensitivity of conventional PES. Unlike soft X-ray PES, 2p core-level HAXPES have shown additional well-screened features with significant intensity at the low binding energy side of the main peak. These features were explained well by the configuration-interaction model including a screening channel derived from coherent states near Fermi energy. Here, we review these advances and examine the application of HAXPES to studies of the strongly correlated electron systems, especially for 3d transition metal compounds. The details of the well-screened features are also discussed.

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Acknowledgments

We sincerely thank all our collaborators of HAXPES studies over viewed in this review. MT acknowledges the support of T. Ishikawa and the X-ray optics group of RIKEN and thanks A. Chainani, M. Matsunami, K. Horiba, R. Eguchi, T. Takeuchi, N. Kamakura and S. Shin, for fruitful collaborations. GP would like to thank the colleagues of the VOLPE project: P. Torelli, F. Offi. F. Borgatti, G. Monaco, G. Paolicelli, A. Fondacaro, M. Sacchi, P. Lacovig, G. Cautero, M. Cautero, the Id16 beamline team and in particular R. Verbeni and C. Henriquet. G. Panaccione thanks G. van der Laan, C.H. Back, R. Egdell and D. Payne for fruitful discussion and suggestion. MT and GP wish to dedicate this article to Dr. Takata’s memory. This work was partially supported by KAKENHI (No. 20540324).

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Correspondence to Munetaka Taguchi .

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Taguchi, M., Panaccione, G. (2016). Depth-Dependence of Electron Screening, Charge Carriers and Correlation: Theory and Experiments. In: Woicik, J. (eds) Hard X-ray Photoelectron Spectroscopy (HAXPES). Springer Series in Surface Sciences, vol 59. Springer, Cham. https://doi.org/10.1007/978-3-319-24043-5_9

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