Abstract
In this work we present a semi-classical modeling and simulation approach for ultra-narrow channels that has been implemented as part of the Vienna Schrödinger-Poisson (VSP) simulation framework (Baumgartner, J Comput Electron 12:701–721, 2013; http://www.globaltcad.com/en/products/vsp.html (2014)) over the past few years. Our research has been driven by two goals: maintaining high physical accuracy of the models while producing a computationally efficient and flexible simulation code.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Baumgartner, O., Stanojevic, Z., Schnass, K., Karner, M., Kosina, H.: VSP–a quantum-electronic simulation framework. J. Comput. Electron. 12, 701–721 (2013). doi:10.1007/s10825-013-0535-y. http://dx.doi.org/10.1007/s10825-013-0535-y
Dimmock, J.O., Wright, G.B.: Band edge structure of PbS, PbSe, and PbTe. Phys. Rev. 135, A821–A830 (1964). doi:10.1103/PhysRev.135.A821. http://link.aps.org/doi/10.1103/PhysRev.135.A821
Dresselhaus, G., Kip, A.F., Kittel, C.: Cyclotron resonance of electrons and holes in silicon and germanium crystals. Phys. Rev. 98, 368–384 (1955). doi:10.1103/PhysRev.98.368. http://link.aps.org/doi/10.1103/PhysRev.98.368
Fischetti, M.V., Ren, Z., Solomon, P.M., Yang, M., Rim, K.: Six-band k⋅ p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. J. Appl. Phys. 94(2), 1079–1095 (2003). doi:http://dx.doi.org/10.1063/1.1585120. http://scitation.aip.org/content/aip/journal/jap/94/2/10.1063/1.1585120
Hensel, J.C., Hasegawa, H., Nakayama, M.: Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond. Phys. Rev. 138(1A), A225–A238 (1965). doi:10.1103/PhysRev.138.A225
Kane, E.O.: Energy band structure in p-type germanium and silicon. J. Phys. Chem. Solids 1(1–2), 82–99 (1956). doi:http://dx.doi.org/10.1016/0022-3697(56)90014-2. http://www.sciencedirect.com/science/article/pii/0022369756900142
Lehoucq, R., Sorensen, D., Yang, C.: ARPACK users’ guide: solution of large-scale eigenvalue problems with implicitly restarted Arnoldi methods (1998)
Prange, R.E., Nee, T.W.: Quantum spectroscopy of the low-field oscillations in the surface impedance. Phys. Rev. 168, 779–786 (1968). doi:10.1103/PhysRev.168.779. http://link.aps.org/doi/10.1103/PhysRev.168.779
Ramayya, E.B., Vasileska, D., Goodnick, S.M., Knezevic, I.: Electron transport in silicon nanowires: the role of acoustic phonon confinement and surface roughness scattering. J. Appl. Phys. 104(6), 063711 (2008). doi:10.1063/1.2977758. http://link.aip.org/link/?JAP/104/063711/1
Stanojevic, Z., Kosina, H.: Surface-roughness-scattering in non-planar channels – the role of band anisotropy. In: International Conference on Simulation of Semiconductor Processes and Devices, pp. 352–355 (2013)
Stanojevic, Z., Karner, M., Kosina, H.: Exploring the design space of non-planar channels: shape, orientation, and strain. In: International Electron Device Meeting, pp. 332–335 (2013). doi:10.1109/IEDM.2013. 6724618
Acknowledgements
This work has been supported by the Austrian Science Fund through contracts F2509 and I841-N16.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer International Publishing AG
About this paper
Cite this paper
Stanojević, Z., Baumgartner, O., Karner, M., Filipović, L., Kernstock, C., Kosina, H. (2016). Advanced Numerical Methods for Semi-classical Transport Simulation in Ultra-Narrow Channels. In: Russo, G., Capasso, V., Nicosia, G., Romano, V. (eds) Progress in Industrial Mathematics at ECMI 2014. ECMI 2014. Mathematics in Industry(), vol 22. Springer, Cham. https://doi.org/10.1007/978-3-319-23413-7_95
Download citation
DOI: https://doi.org/10.1007/978-3-319-23413-7_95
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-23412-0
Online ISBN: 978-3-319-23413-7
eBook Packages: Mathematics and StatisticsMathematics and Statistics (R0)