Abstract
The combined use of Resonant Raman and Brillouin scattering together with a “simple” description of the energy bands allows to determine the absolute values of scattering cross sections and of phonon deformation potentials (including sign) in semiconductors and insulators. Besides, a lesson on how to treat green researchers (and people in general) is given.
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References
J.M. Calleja, J. Kuhl, M. Cardona, Resonant Raman scattering in diamond. Phys. Rev. B 17, 376 (1978)
J.M. Calleja, M. Cardona, Resonant Raman scattering in ZnO. Phys. Rev. B 16, 3753 (1977)
J.M. Calleja, H. Vogt, M. Cardona, Absolute Raman scattering efficiencies of some zincblende and fluorite-type materials. Phil Mag. A 45, 239 (1982)
M.H. Grimsditch, A.K. Ramdas, Brillouin scattering in diamond. Phys. Rev. B 11, 3139 (1975)
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Manuel was lately quite interested in bibliometric issues. There is an interesting case for those who believe blindly in citations, h numbers and alike. It is an example of “Sleeping Beauty”: [2] received a total of 35 citations in the first 30 years after publication. Then ZnO became a fancy material due to its emerging interest for optoelectronic applications. As a result, the number of citations climbed to 508 (21-10-2014). The paper is, of course, the same.
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Calleja, J.M. (2016). How to Get Absolute Values from Relative Measurements. In: Ensslin, K., Viña, L. (eds) Manuel Cardona. Springer, Cham. https://doi.org/10.1007/978-3-319-20343-0_7
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DOI: https://doi.org/10.1007/978-3-319-20343-0_7
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