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Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs)

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Handbook of Visual Display Technology

Abstract

Poly-Si TFTs are now in mass production for small diagonal displays, and, in this article, the fabrication and performance of these devices are discussed, with particular focus on the formation of poly-Si by excimer laser crystallization, the issues surrounding TFT architecture, and the performance artifacts associated with the high electrostatic field at the drain junction.

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Abbreviations

AMLCD:

Active matrix liquid crystal display

AMOLED:

Active matrix organic light-emitting diode

a-Si:H:

Hydrogenated amorphous silicon

DOS:

Density of states

ELA:

Excimer laser annealing

GOLDD:

Gate overlapped lightly doped drain

HCD:

Hot-carrier damage

LDD:

Lightly doped drain

LPCVD:

Low pressure chemical vapor deposition

MOSFET:

Metal oxide semiconductor field effect transistor

PECVD:

Plasma-enhanced chemical vapor deposition

SLG:

Super-lateral growth

SOG:

System on glass

SOI:

Silicon on insulator

Further Reading

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Author information

Authors and Affiliations

  1. TFT Consultant, RH18 5HB, Forest Row, E Sussex, UK

    Stan D. Brotherton

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  1. Stan D. Brotherton
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Correspondence to Stan D. Brotherton .

Editor information

Editors and Affiliations

  1. Display Technology Center, Panel Integration Division I, Industrial Technology Research Institute (ITRI), Chutung, Hsinchu, Taiwan

    Janglin Chen

  2. Sheffield Hallam University, Sheffield, United Kingdom

    Wayne Cranton

  3. Veritas et Visus, Temple, Texas, USA

    Mark Fihn

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Brotherton, S.D. (2016). Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs). In: Chen, J., Cranton, W., Fihn, M. (eds) Handbook of Visual Display Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-14346-0_48

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