Abstract
With the advent of nano-devices, the build-in electric field becomes so large that the electron energy spectrum changes fundamentally instead of being invariant and this appendix investigates the ER under intense electric field in bulk specimens of HD III-V, ternary and quaternary semiconductors. Besides we also explore the influence of electric field on the ER based on HD new dispersion law under magnetic quantization, size quantization, accumulation layers, HD doping superlattices and effective mass HD superlattices under magnetic quantization respectively. The Sect. 9.3 contains 43 deep open research problems.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
Reference
K.P. Ghatak, S. Bhattacharya, Debye Screening Length: Effects of Nanostructured Materials, Springer Tracts in Modern Physics, vol. 255 (Springer, Heidelberg, 2014)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2015 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Ghatak, K.P., Bhattacharya, S. (2015). Appendix D: The ER in HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field. In: Heavily-Doped 2D-Quantized Structures and the Einstein Relation. Springer Tracts in Modern Physics, vol 260. Springer, Cham. https://doi.org/10.1007/978-3-319-08380-3_9
Download citation
DOI: https://doi.org/10.1007/978-3-319-08380-3_9
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-08379-7
Online ISBN: 978-3-319-08380-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)