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Highly Efficient Field Emission Characteristics of Ultra-long Vertical Aligned Single Wall Carbon Nanotubes

  • Conference paper
Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

  • 166 Accesses

Abstract

In this work, ultra long vertically aligned single wall carbon nanotubes are synthesised by Plasma enhanced chemical vapour deposition (PECVD) technique at 600 °C temperature. The presence of built-in electric field in a plasma sheath aligns the growing CNTs along the field lines. Also, PECVD method favours low temperature synthesis of VA-SWCNTs. SEM and Raman are used to characterized as grown sample. Enhanced Field emission properties of as-grown VA-SWCNTs are also studied.

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Acknowledgments

We are thankful to Department of Electronics and Information Technology (DeitY) for providing fund in the form of major research project.

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Authors and Affiliations

  1. Department of Physics, Jamia Millia Islamia (Central University), New Delhi, India

    Shama Parveen, Samina Husain, Avshish Kumar, Javid Ali,  Harsh & Mushahid Husain

  2. Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi, India

    Mushahid Husain

Authors
  1. Shama Parveen
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  2. Samina Husain
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  3. Avshish Kumar
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  4. Javid Ali
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  5. Harsh
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  6. Mushahid Husain
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Corresponding author

Correspondence to Mushahid Husain .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Parveen, S., Husain, S., Kumar, A., Ali, J., Harsh, Husain, M. (2014). Highly Efficient Field Emission Characteristics of Ultra-long Vertical Aligned Single Wall Carbon Nanotubes. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_189

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