Abstract
The Ni/CdTe/Au Schottky diode X/γ-ray sensors, fabricated using the Ar-ion bombarding technique, exhibit low leakage current density (~20 nA/cm2 at 1000 V) and high energy resolution (~1.0%@662 keV). We present and analyze the dependencies of the 137Cs isotope energy spectra on the applied bias, the distance between the sensor and the radiation source, and the operation time. Despite the small (1 mm) CdTe crystal thickness, resulting in low radiation absorption and, therefore, a low probability of γ-photon capture and thus generation of electron-hole pairs, the sensors demonstrated high detection efficiency. This can be attributed to a high potential barrier at the Ni/CdTe Schottky contact, allowing the application of high bias voltages and ensuring a complete charge carrier collection.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Triboulet R., Siffert, P.: CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-Structures, Crystal Growth, Surfaces and Applications. Part II: Crystal Growth, Surfaces and Applications. Elsevier, Amsterdam and Oxford (2010)
Zappettini, A.: Cadmium telluride and cadmium zinc telluride. Chapter 8. In: Fornari, R. (ed.) Single Crystals of Electronic Materials, Growth and Properties, pp. 273–301. Woodhead Publishing, Cambridge (2019)
Takahashi, T., Watanabe, S., Ishikawa, S.: High-resolution CdTe detectors and application to gamma-ray imaging. Chapter 8. In: Iniewski, K. (ed.) Semiconductor Radiation Detection Systems, pp. 171–192. Taylor & Francis Group, New York (2010)
Brus, V.V., et al.: Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-ray radiation detectors. Sci. Rep. 9(1), 1065–1–8 (2019)
Aoki, T., et al.: Development of energy discriminated CdTe imaging detector for hard X-ray. In: Proceedings of SPIE, vol. 5540, pp. 196–205. SPIE, San Diego, CA, USA (2004)
Gnatyuk, V.: In/CdTe/Au p-n junction-diode X/γ-ray detectors formed by frontside laser irradiation doping. Nucl. Instrum. Meth. Phys. Res. A 1029, 166397–1–8 (2022)
Gnatyuk, V., Maslyanchuk, O., Solovan, M., Brus, V., Aoki, T.: CdTe X/γ-ray detectors with different contact materials. Sensors 21(10), 3518–1–20 (2021)
Sklyarchuk, V.M., Gnatyuk, V.A., Fang, X., Aoki, T.: Effect of the thickness of CdTe crystals on electrical and detection properties of Cr/CdTe/Au Schottky-diode detectors. In: Proceedings of SPIE, vol. 11114, pp. 111141S-1-7. SPIE, San Diego, CA, USA (2019)
Sklyarchuk, V. M., Gnatyuk, V. A., Aoki, T.: Effect of CdTe crystal thickness on the efficiency of Cr/CdTe/Au Schottky-diode detectors. Nucl. Instrum. Meth. Phys. Res. A 953, 163224–1–5 (2020)
Sklyarchuk, V., Gnatyuk, V., Fochuk, P. Aoki, T.: Characterization of Schottky-diode X/γ-ray detectors based on CdTe crystals with different uncompensated impurity concentrations. Nucl. Instrum. Meth. Phys. Res. A 1027, 166229–1–9 (2022)
Gnatyuk, D.V., Poperenko, L.V., Yurgelevych, I.V., Aoki, T.: Characterization of the surfaces of CdTe(111) single crystals after laser processing. In: Proceedings of SPIE, vol. 8142, pp. 81421N-1-7. SPIE, San Diego, CA, USA (2011)
Gnatyuk, D.V., Poperenko, L.V., Yurgelevych, I.V., Dacenko, O.I., Aoki, T.: Characterization of functional layers of CdTe crystals subjected to different surface treatments. IEEE Trans. Nucl. Sci. 62(2), 428–432 (2015)
Sze, S.M., Ng, K.K.: Physics of Semiconductor Devices, 3rd edn. John Wiley & Sons Inc., Hoboken, New Jersey (2007)
ANSeeN Inc. http://anseen.com. Accessed 10 Nov 2023
Canali, C., Martini, M., Ottaviani, G., Zanio, K.R.: Transport properties in CdTe. Phys. Rev. B 4(2), 422–431 (1971)
Cola, A., Farella, I. The polarization mechanism in CdTe Schottky detectors. Appl. Phys. Lett. 94(10), 102113–1–3 (2009)
Acknowledgement
The research was partially supported by the 2023 Cooperative Research Projects of the Research Center for Biomedical Engineering (grants No 2053 and 2078), Japan.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2024 The Author(s), under exclusive license to Springer Nature Switzerland AG
About this paper
Cite this paper
Gnatyuk, V., Sklyarchuk, V., Kulyk, O., Aoki, T. (2024). Spectroscopic Studies of High Performance CdTe-Based Schottky Diode X/γ-Ray Sensors. In: Ono, Y., Kondoh, J. (eds) Recent Advances in Technology Research and Education. Inter-Academia 2023. Lecture Notes in Networks and Systems, vol 939. Springer, Cham. https://doi.org/10.1007/978-3-031-54450-7_8
Download citation
DOI: https://doi.org/10.1007/978-3-031-54450-7_8
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-031-54449-1
Online ISBN: 978-3-031-54450-7
eBook Packages: Intelligent Technologies and RoboticsIntelligent Technologies and Robotics (R0)