Abstract
Nowadays, dielectric materials with excellent mechanical and thermal properties are desired for use in integrated circuits (ICs). For this reason, low dielectric constant Poly (m-phenylene isophthalamide)/fluorographene (PMIA/FG) composite films were prepared via the in-situ interfacial polycondensation method. Isophthaloyl chloride and m-phenylene diamine were reacted in a two-phase media in the presence of FG nanoparticles. suggesting that the mechanical, electrical, and thermal properties were significantly enhanced in the presence of FG. With the addition of 1.25 wt% FG, the tensile strength and elongation at break were increased by 110% and 20% respectively, when compared with pure PI film. Furthermore, composite films exhibit a 465 °C initial degradation temperature, indicating high thermal stability. Especially, the PMIA/FG film with 0.75 wt% of FG possesses a low dielectric constant of 2.15 compared to a 3.44 dielectric constant for pure PMIA. Therefore, by their excellent performance, PMIA/FG hybrid films represent suitable applications in the microelectronics and aerospace industries.
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Acknowledgements
is due to the Dean of the Faculty of Engineering at Pharos University, Prof. Dr. Mohamed Gaber Abou Ali, and to the Head of Department of Petrochemicals Engineering, Prof. Dr. Abbas Anwar Ezzat.
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Elbayar, L., Abdelaty, M., Nosier, S.A., Ezzat, A.A., Shokry, F. (2024). In-Situ Fabrication of Poly (m-Phenylene Isophthalamide)/Fluorographene Nanocomposites and Their Properties. In: Negm, A.M., Rizk, R.Y., Abdel-Kader, R.F., Ahmed, A. (eds) Engineering Solutions Toward Sustainable Development. IWBBIO 2023. Earth and Environmental Sciences Library. Springer, Cham. https://doi.org/10.1007/978-3-031-46491-1_51
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