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Nanocomposite and Hybrid-Based Electric and Electronic Gas Sensors

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Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

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Abstract

This chapter considers the methods for the synthesis of II-VI semiconductors (cadmium and zinc chalcogenides) in the nanocrystalline state, methods for the formation of nanocomposites containing II-VI semiconductors, and summarizes the sensor properties of these composites under thermal and light activation. When detecting gases under thermal activation, the role of II-VI semiconductors in such nanocomposites in most cases is the manipulation of the energy barrier formed due to band bending of contacting semiconductors. Under photoactivation, II-VI semiconductors are responsible for the visible light absorption followed by the generation of photoexcited charge carriers.

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Acknowledgements

This work was supported by RFBR grant 21-53-53018.

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Authors and Affiliations

  1. Chemistry Department, Moscow State University, Moscow, Russia

    Roman B. Vasiliev, Artem S. Chizhov & Marina N. Rumyantseva

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  1. Roman B. Vasiliev
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  2. Artem S. Chizhov
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  3. Marina N. Rumyantseva
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Correspondence to Marina N. Rumyantseva .

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  1. Department of Physics and Engineering, Moldova State University, Chisinau, MD-2009, Moldova

    Ghenadii Korotcenkov

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Vasiliev, R.B., Chizhov, A.S., Rumyantseva, M.N. (2023). Nanocomposite and Hybrid-Based Electric and Electronic Gas Sensors. In: Korotcenkov, G. (eds) Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer, Cham. https://doi.org/10.1007/978-3-031-24000-3_8

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