Abstract
The effect of dichloroethane on the light-induced electronic behaviour of two-dimensional MoS2 has been reported in this work. The Raman spectra gathered on the 2D MoS2 crystallites confirm the presence of the out-of-plane and the in-plane vibrational modes for multilayer MoS2. The photoluminescence (PL) measurements reveal a quantum confined bandgap occurring at ~1.83 eV for our mechanically exfoliated 2D MoS2 membranes. Electronic transport measurements on our membranes were conducted by using electron beam lithography with Au/Ti electrodes deposited using physical vapor deposition. After the electrodes were patterned for metal deposition by lift-off, two-terminal and three-terminal electronic transport measurements were initiated on the fabricated devices. These measurements revealed that electrons are presumed to be donated to the 2D MoS2 through the substitution of chlorine atoms from exposure to dichloroethane in solution form after device fabrication, where the chlorine atoms occupy the naturally occurring sulphur vacancy sites in this van der Waals solid.
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References
Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7(11):699–712
Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK (2005) Two-dimensional atomic crystals. Proc Natl Acad Sci 102(30):10451–10453
Zhou X, Sun H, Bai X (2020) Two-dimensional transition metal dichalcogenides: synthesis, biomedical applications and biosafety evaluation. Front Bioeng Biotechnol 8:236. https://doi.org/10.3389/fbioe.2020.00236
Kaul AB (2014) Two-dimensional layered materials: structure, properties, and prospects for device applications. J Mater Res 29(3):348–361
Mehta R, Min M, Kaul AB (2020) Sol-gel synthesized indium tin oxide as a transparent conducting oxide with solution-processed black phosphorus for its integration into solar-cells. J Vacuum Sci Technol B, 38(6):063203
Desai JA, Bandyopadhyay A, Min M, Saenz G, Kaul AB (2020) A photo-capacitive sensor operational from 6 K to 350 K with a solution printable, thermally-robust hexagonal boron nitride (h-BN) dielectric and conductive graphene electrodes. Appl Mater Today 20:100660
Hossain RF, Min M, Ma LC, Sakri SR, Kaul AB (2021) Carrier photodynamics in 2D perovskites with solution-processed silver and graphene contacts for bendable optoelectronics. npj 2D Mater Appl 5(1):1–2
Min M, Sakri S, Saenz GA, Kaul AB (2021) Photophysical dynamics in semiconducting graphene quantum dots integrated with 2D MoS2 for optical enhancement in the near UV. ACS Appl Mater Interfaces 13(4):5379–5389
Mehta RK, Kaul AB (2021) Black phosphorus-molybdenum disulfide hetero-junctions formed with ink-jet printing for potential solar cell applications with indium-Tin-oxide. Curr Comput-Aided Drug Des 11(5):560
Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD (2014) Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. ACS Nano 8(1):1031–1038
Kim G-S, Kim S-W, Kim S-H, Park J, Seo Y, Cho BJ, Shin C, Shim JH, Yu H-Y (2016) Effective schottky barrier height lowering of Metal/n-Ge with a TiO2/GeO2 interlayer stack. ACS Appl Mater Interfaces 8(51):35419–35425
Kobayashi M, Kinoshita A, Saraswat K, Wong HS, Nishi Y (2009) Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application. J Appl Phys 105(2):023702
Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS (2016) High performance and transparent multilayer MoS2 transistors: tuning Schottky barrier characteristics. AIP Adv 6(5):055026
Brillson LJ, Lu Y (2011) ZnO Schottky barriers and Ohmic contacts. J Appl Phys 109(12):8
Lousberg GP, Yu HY, Froment B, Augendre E, Keersgieter AD, Lauwers A, Li M-F, Absil P, Jurczak M, Biesemans S (2007) Schottky-barrier height lowering by an increase of the substrate doping in ptsi schottky barrier source/drain FETs. IEEE Electron Device Lett 28(2):123–125
Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung PY, Tieckelmann R, Tsai W, Hobbs C, Ye PD (2014) Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Lett 14(11):6275–6280
Ryder CR, Wood JD, Wells SA, Hersam MC (2016) Chemically tailoring semiconducting two-dimensional transition metal dichalcogenides and black phosphorus. ACS Nano 10(4):3900–3917
Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T (2019) Doping engineering and functionalization of two-dimensional metal chalcogenides. Nanoscale Horizons 4(1):26–51
Kaushik N, Nipane A, Basheer F, Dubey S, Grover S, Deshmukh MM, Lodha S (2014) Schottky barrier heights for Au and Pd contacts to MoS2. Appl Phys Lett 105(11):113505
Liu X, Yuan Y, Qu D, Sun J (2019) Ambipolar MoS2 field‐effect transistor by spatially controlled chemical doping. Physica status solidi (RRL). Rapid Res Lett 13(9):1900208
Li M, Yao J, Wu X, Zhang S, Xing B, Niu X, Yan X, Yu Y, Liu Y, Wang Y (2020) P-type doping in large-area monolayer MoS2 by chemical vapor deposition. ACS Appl Mater Interfaces 12(5):6276–6282
Acknowledgements
R. M. thanks Kishan Jayanand for providing assistance in some of the transport measurements. We acknowledge the Office of Naval Research (ONR) (Grant No. ONR N00014-19-1-2142) that enabled us to pursue this work. A.B.K. is also grateful to the support received from the University of North Texas (UNT) PACCAR Technology Institute and Endowed Professorship support.
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Mehta, R., Kaul, A.B. (2022). Effect of Dichloroethane on the Electronic Transport Behavior in Semiconducting MoS2. In: TMS 2022 151st Annual Meeting & Exhibition Supplemental Proceedings. The Minerals, Metals & Materials Series. Springer, Cham. https://doi.org/10.1007/978-3-030-92381-5_144
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