Abstract
This work discusses the design of 1310/1550 nm fully integrated optical receivers in bulk CMOS, suitable for single-mode fiber communication. The key enabler for detection of these sub-band gap wavelengths is internal photoemission in Schottky photodiodes. With standard bulk CMOS processes not conceived for these type of devices, the first step toward full receivers is adequate modeling. As these devices have modest responsivities, care must be taken in minimizing the input-referred noise current of the receiver front-end. To this end, SNR optimization of receiver front-ends without and with equalization is thoroughly discussed. Making use of this design flow, three fully integrated receiver prototypes with Schottky photodiodes suitable for 1310/1550 nm light are presented in depth, which demonstrate Gb/s performance.
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References
E. Säckinger, Broadband Circuits for Optical Fiber Communication (Wiley, New York, 2005)
P. De Dobbelaere et al., Advanced silicon photonics technology platform leveraging a semiconductor supply chain, in 2017 IEEE International Electron Devices Meeting (IEDM), December 2017, pp. 34.1.1–34.1.4
A. Atabaki, H. Meng, L. Alloatti, K. Mehta, R. Ram, High-speed polysilicon CMOS photodetector for telecom and datacom. Appl. Phys. Lett. 109, 111106 (2016)
W. Diels, M. Steyaert, F. Tavernier, Schottky photodiodes in bulk CMOS for high-speed 1310/1550 nm optical receivers. IEEE J. Select. Top. Quant. Electron. 24(6), 1–8 (2018)
M. Casalino, Internal photoemission theory: comments and theoretical limitations on the performance of near-infrared silicon Schottky photodetectors. IEEE JQE 52(4), 1–10
B. Smith, E. Rhoderick, Schottky barriers on p-type silicon. Solid-State Electron. 14(1), 71–75 (1971)
A. Sharif-Bakhtiar, A. Chan Carusone, A 20 Gb/s CMOS optical receiver with limited-bandwidth front end and local feedback IIR-DFE. IEEE J. Solid-State Circ. 51(11), 2679–2689 (2016)
F. Tavernier, M. Steyaert, High-Speed Optical Receivers with Integrated Photodiode in Nanoscale CMOS. Analog Circuits and Signal Processing (Springer, New York, 2011)
S. Radovanovic, A. Annema, B. Nauta, A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication. IEEE J. Solid-State Circ. 40(8), 1706–1717 (2005)
D. Li, G. Minoia, M. Repossi, D. Baldi, E. Temporiti, A. Mazzanti, F. Svelto, A low-noise design technique for high-speed CMOS optical receivers. IEEE J. Solid-State Circ. 49(6), 1437–1447 (2014)
S. Shahramian, A. Chan Carusone, A 0.41 pJ/Bit 10 Gb/s hybrid 2 IIR and 1 discrete-time DFE tap in 28 nm-LP CMOS. IEEE J. Solid-State Circ. 50(7), 1722–1735 (2015)
W. Diels, M. Steyaert, F. Tavernier, A 1310/1550 nm fully-integrated optical receiver with Schottky photodiode and low-noise transimpedance amplifier in 40 nm bulk CMOS, in ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), September 2018, pp. 242–245
W. Diels, M. Steyaert, F. Tavernier, Optical receiver with Schottky photodiode and TIA with high gain amplifier in 28 nm bulk CMOS, in ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, pp. 149–152
A. Dorodnyy et al., Plasmonic photodetectors. IEEE J. Select. Top. Quant. Electron. 24(6), 1–13 (2018)
A.T. Ramkaj, M.S.J. Steyaert, F. Tavernier, A 13.5-Gb/s 5-mV-sensitivity 26.8-ps-CLK-OUT delay triple-latch feedforward dynamic comparator in 28-nm CMOS, in ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, pp. 167–170
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Diels, W., Tavernier, F. (2022). Optical Communication in CMOS—Bringing New Opportunities to an Established Platform. In: Harpe, P., Makinwa, K.A., Baschirotto, A. (eds) Analog Circuits for Machine Learning, Current/Voltage/Temperature Sensors, and High-speed Communication. Springer, Cham. https://doi.org/10.1007/978-3-030-91741-8_17
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DOI: https://doi.org/10.1007/978-3-030-91741-8_17
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