Abstract
This study aimed to develop and validate a short form of the Smartphone Addiction Inventory (SPAI) and determine the cut-off point for smartphone addiction based on a psychiatric interview. A sample of 281 Iranian undergraduate students from Mazandaran University of Medical Sciences completed the 26‐item SPAI and psychologist interview. Stepwise multiple linear regression identified 10 items for the short-form of the SPAI, consisting of compulsive behavior (four items), functional impairment (three items), withdrawal (two items), and tolerance (one item) with an explained variance of 96%. Exploratory factor analysis revealed a two-factor structure that labeled Compulsive behavior and Functional impairment (47.99 variance) and Withdrawal and Tolerance (11.57 variance). Confirmatory factor analysis (CFA) verified the structure by excellent goodness of fit indices (p-value = 0.061, x2/df = 1.43, CFI = 0.99, GFI = 0.97, and RMSEA = 0.039). The inter-item and item-total correlations of the SPAI-SF were positively significant and confirmed the convergent validity. Internal consistency verified by Cronbach’s alpha of 0.875 (CI: 0.852 − 0.896). The area under the curve (AUC) was 0.876 (95% CI = 0.833 − 0.919, p < 0.001), indicating a good diagnostic efficiency. The best cut-off point to discriminate diagnostic negatives was 23, with a sensitivity of 79.19%, a specificity of 83.33%, and an accuracy of 80.43%. The results indicated acceptable reliability, validity, and AUC for the SPAI-SF for smartphone addiction screening and studies.
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This work was supported by the Mazandaran University of Medical Sciences with code IR.MAZUMS.REC.1398.618.
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Arpaci, I., Barzegari, S., Mahmoodi, H., Afrooz, E., Ranjbar, A.Z. (2022). Psychometric Characteristics of the Iranian Smartphone Addiction Inventory Short Form (SPAI-SF). In: Al-Emran, M., Al-Sharafi, M.A., Al-Kabi, M.N., Shaalan, K. (eds) Proceedings of International Conference on Emerging Technologies and Intelligent Systems. ICETIS 2021. Lecture Notes in Networks and Systems, vol 322. Springer, Cham. https://doi.org/10.1007/978-3-030-85990-9_51
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DOI: https://doi.org/10.1007/978-3-030-85990-9_51
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