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Carbon Nanotube Dual-Material Gate Devices for Flexible Electronics

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Nanoporous Carbons for Soft and Flexible Energy Devices

Part of the book series: Carbon Materials: Chemistry and Physics ((CMCP,volume 11))

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Abstract

Due to limited power supply and multifarious scenarios in practical applications, flexible electronic devices are expected to have low power consumption and functional configurability. In this chapter, a novel technology of dual-material gate (DMG) is demonstrated in flexible carbon nanotube (CNT) devices, which could modulate the energy-band structure in channel area of the devices by adopting two kinds of metals with different work functions, leading to low-power characteristics and functional configurability simultaneously. First, concept and principles of CNT-based DMG technology are introduced, followed by demonstrations of low-power characteristics of DMG devices under the transistor configuration. Then, after the exhibition of the devices under diode configuration, factors that could affect the electrical performances of DMG devices are identified. Finally, the flexibility of DMG devices and multifunctional integrated circuits (ICs) are demonstrated, together with the discussion of future perspectives of DMG technology.

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Abbreviations

DMG:

Dual-Material Gate

NG:

Normal-Gated

FET:

Field Effect Transistor

MOSFET:

Metal-Oxide-Semiconductor Field Effect Transistor

CNT:

Carbon Nanotube

IC:

Integrated Circuit

Al:

Aluminum

Y:

Yttrium

Ti:

Titanium

Au:

Gold

Pd:

Palladium

I off :

off-state current

I on :

on-state current

V gs :

gate-to-source voltage

V ds :

drain-to-source voltage

W :

Width of the device channel

L :

Length of the device channel

SS :

subthreshold swing

V th :

threshold voltage

DIBL:

Drain-Induced Barrier Lowering

I diode-on :

on-current of diode

I-V curve:

current-voltage characteristic curves

V g-in :

input signal applied on gate electrode

V d-in :

input signal applied on drain electrode

V ctrl :

Controlling signal

V out :

Output signal

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Authors and Affiliations

  1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing, China

    Li Xiang & Youfan Hu

  2. College of Materials Science and Engineering, Hunan University, Changsha, China

    Li Xiang

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  1. Li Xiang
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  2. Youfan Hu
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Correspondence to Youfan Hu .

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Editors and Affiliations

  1. Department of Physics, University of Milan, Milan, Italy

    Francesca Borghi

  2. Department of Chemistry “Giacomo Ciamician”, Alma Mater Studiorum University of Bologna, Bologna, Italy

    Francesca Soavi

  3. Department of Physics, University of Milan, Milan, Italy

    Paolo Milani

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Xiang, L., Hu, Y. (2022). Carbon Nanotube Dual-Material Gate Devices for Flexible Electronics. In: Borghi, F., Soavi, F., Milani, P. (eds) Nanoporous Carbons for Soft and Flexible Energy Devices. Carbon Materials: Chemistry and Physics, vol 11. Springer, Cham. https://doi.org/10.1007/978-3-030-81827-2_2

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