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Light-Emission from Ion-Implanted Group-IV Nanostructures

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Silicon Photonics IV

Part of the book series: Topics in Applied Physics ((TAP,volume 139))

Abstract

Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers remains the main bottleneck for silicon photonics to become the key technology of the twenty-first century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low-energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically driven devices, such as light-emitting diodes (LEDs), can be fabricated employing optically active DEQD material. These LEDs exhibit exceptional temperature stability of their light-emission properties even up to 100 °C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.

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Acknowledgements

I would like to use this opportunity to gratefully thank the main mentors in my scientific career, Günther Bauer, Friedrich Schäffler, Thomas Fromherz and Armando Rastelli. This work was funded by the Austrian Science Fund (FWF): Y1238-N36, P29137-N36. Funding was also provided by the EU H2020 QuantERA ERA-NET via the Quantum Technologies project CUSPIDOR, which is co-funded by FWF(I3760) and the Linz Institute of Technology (LIT): LIT-2019-7-SEE-114.

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  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Strasse 69, 4040, Linz, Austria

    Moritz Brehm

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  1. National Research Council of Canada, Metrology Research Centre, Ottawa, ON, Canada

    David J. Lockwood

  2. Department of Physics, University of Trento, Povo, Italy

    Lorenzo Pavesi

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Brehm, M. (2021). Light-Emission from Ion-Implanted Group-IV Nanostructures. In: Lockwood, D.J., Pavesi, L. (eds) Silicon Photonics IV. Topics in Applied Physics, vol 139. Springer, Cham. https://doi.org/10.1007/978-3-030-68222-4_2

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