Abstract
The influence of the dielectric material (Ta2O5, Si3N4, (ZrO2)10%(TiO2)90% and SnO2), its formation methods (pulsed laser deposition, plasma-chemical method, sol-gel method, reactive magnetron sputtering) and technological post-processing (forming gas annealing) has been investigated. It is shown that different methods of dielectric material obtaining affect the temperature of maximum sensitivity and response time of gas sensors. However, there is no significant improvement in selectivity in the ppb concentration range. A two-electrode capacitive sensor element was manufactured and tested. The using of two-electrode MIS sensor gives some improvement in selectivity but does not justify the cost of increasing the size and power consumption of the sensors. The reproducibility of characteristics of MIS structures of Pd-SiO2-Si and Pd-Ta2O5-SiO2-Si in sensitivity and response time was studied. More than 90% of suitable MIS structures after forming gas annealing (40 h at TMIS = 130 ℃ in a medium of 2% vol.d. H2 + air) have limit of hydrogen detection 150 ± 75 ppb and characteristic response times to supply and removal of 5 ppm H2 τ0.9 = 5 ± 3 min and τ0.1 = 8 ± 5 min, respectively. It is shown that if the sensor has the greatest sensitivity to hydrogen, then for all other gases it will be also the most sensitive among others. The stability to the effects of NO2 concentration overload was investigated. It is shown that the 1000-fold NO2 concentration overload does not poison the sensor.
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Acknowledgements
This work was supported by the Russian Science Foundation (Grant Agreement 18-79-10230 of 08.08.2018).
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Etrekova, M., Litvinov, A., Samotaev, N., Filipchuk, D., Oblov, K., Mikhailov, A. (2021). Investigation of Selectivity and Reproducibility Characteristics of Gas Capacitive MIS Sensors. In: Velichko, E., Vinnichenko, M., Kapralova, V., Koucheryavy, Y. (eds) International Youth Conference on Electronics, Telecommunications and Information Technologies. Springer Proceedings in Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-030-58868-7_10
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