Abstract
This chapter starts by highlighting the requirements and existing techniques in producing digital delay, summarizing the state of the art. Subsequently, a topology assessment is presented based on specified performance metrics. The proposed delay cell which was designed, fabricated, and characterized is then described. Specifically, the proposed design is based on a topology with low-supply-noise sensitivity and low jitter. Functionality is extended to support coarse/fine control for the output delay value, without the need for additional hardware. This is made possible by taking advantage of the body-biasing capabilities available in FD-SOI technology. The proposed delay element presents unique performance characteristics in terms of the achieved delay resolution and delay dynamic range. The chapter concludes with the demonstration of a delay line prototype, fabricated in ST 28 nm FD-SOI technology. After a general overview of delay techniques the proposed topology is described, by focusing on the major design aspects. Measurement results are then presented and a short discussion follows on the characterization findings.
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Sourikopoulos, I., Cathelin, A., Kaiser, A., Frappé, A. (2020). Coarse/Fine Delay Element Design in 28 nm FD-SOI. In: Clerc, S., Di Gilio, T., Cathelin, A. (eds) The Fourth Terminal. Integrated Circuits and Systems. Springer, Cham. https://doi.org/10.1007/978-3-030-39496-7_6
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