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Random Telegraph Noise in Flash Memories

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Noise in Nanoscale Semiconductor Devices

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Abstract

We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description. RTN effect on the programmed threshold voltage is then addressed. Finally, we review the impact of RTN in 3D NAND Flash and its relation to their polycrystalline channel, from an experimental and theoretical standpoint.

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References

  1. K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth, D.M. Tennant, Phys. Rev. Lett. 52, 228 (1984). https://doi.org/10.1103/PhysRevLett.52.228

    Article  Google Scholar 

  2. M.J. Kirton, M.J. Uren, Adv. Phys. 38, 367 (1989). https://doi.org/10.1080/00018738900101122

    Article  Google Scholar 

  3. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, in Technical Digest, International Electron Devices Meeting (1988), pp. 34–37. https://doi.org/10.1109/IEDM.1988.32743

  4. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, IEEE Electron Device Lett. 11, 90 (1990). https://doi.org/10.1109/55.46938

    Article  Google Scholar 

  5. A. Ohata, A. Toriumi, M. Iwase, K. Natori, J. Appl. Phys. 68, 200 (1990). https://doi.org/10.1063/1.347116

    Article  Google Scholar 

  6. Z.M. Shi, J.P. Mieville, J. Barrier, M. Dutoit, in International Electron Devices Meeting 1991 [Technical Digest] (1991), pp. 363–366. https://doi.org/10.1109/IEDM.1991.235378

  7. P. Fang, K.K. Hung, P.K. Ko, C. Hu, IEEE Electron Device Lett. 12, 273 (1991). https://doi.org/10.1109/55.82058

    Article  Google Scholar 

  8. E. Simoen, B. Diericks, C.L. Claeys, G.J. Declerck, IEEE Trans. Electron Devices 39, 422 (1992). https://doi.org/10.1109/16.121702

    Article  Google Scholar 

  9. M.H. Tsai, T.P. Ma, T.B. Hook, IEEE Electron Device Lett. 15, 504 (1994)

    Article  Google Scholar 

  10. M.J. Uren, M.J. Kirton, S. Collins, Phys. Rev. B 37, 8346 (1988). https://doi.org/10.1103/PhysRevB.37.8346

    Article  Google Scholar 

  11. M.J. Kirton, M.J. Uren, S. Collins, M. Schultz, A. Karmann, K. Scheffer, Semicond. Sci. Technol. 4, 1116 (1989)

    Article  Google Scholar 

  12. H. Nakamura, N. Yasuda, K. Taniguchi, C. Hamaguchi, A. Toriumi, Jpn. J. Appl. Phys. 28, L2057 (1989)

    Article  Google Scholar 

  13. H.H. Mueller, M. Schulz, J. Appl. Phys. 79, 4178 (1996). https://doi.org/10.1063/1.361785

    Article  Google Scholar 

  14. H.H. Mueller, M. Schulz, in Proceedings of 14th International Conference Noise in Physical Systems and 1/F Fluctuations (1997), pp. 195–200

    Google Scholar 

  15. H. Kurata, K. Otsuga, A. Kotabe, S. Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, O. Tsuchiya, in Symposium on VLSI Circuits Digest of Technical Papers (2006), pp. 112–113. https://doi.org/10.1109/VLSIC.2006.1705335

  16. N. Tega, H. Miki, T. Osabe, A. Kotabe, K. Otsuga, H. Kurata, S. Kamohara, K. Tokami, Y. Ikeda, R. Yamada, in International Electron Devices Meeting Technical Digest (2006), pp. 491–494. https://doi.org/10.1109/IEDM.2006.346821

  17. R. Gusmeroli, C. Monzio Compagnoni, A. Riva, A.S. Spinelli, A.L. Lacaita, M. Bonanomi, A. Visconti, in International Electron Devices Meeting Technical Digest (2006), pp. 483–486. https://doi.org/10.1109/IEDM.2006.346819

  18. H. Kurata, K. Otsuga, A. Kotabe, S. Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, O. Tsuchiya, IEEE J. Solid State Circuits 42, 1362 (2007). https://doi.org/10.1109/JSSC.2007.897158

    Article  Google Scholar 

  19. K. Fukuda, Y. Shimizu, K. Amemiya, M. Kamoshida, C. Hu, in International Electron Devices Meeting Technical Digest (2007), pp. 169–172. https://doi.org/10.1109/IEDM.2007.4418893

  20. P. Fantini, A. Ghetti, A. Marinoni, G. Ghidini, A. Visconti, A. Marmiroli, IEEE Electron Device Lett. 28, 1114 (2007). https://doi.org/10.1109/LED.2007.909835

    Article  Google Scholar 

  21. H. Miki, T. Osabe, N. Tega, A. Kotabe, H. Kurata, K. Tokami, Y. Ikeda, S. Kamohara, R. Yamada, in International Reliability Physics Symposium Proceedings (2007), pp. 29–35. https://doi.org/10.1109/RELPHY.2007.369864

  22. N. Tega, H. Miki, M. Yamaoka, H. Kume, T. Mine, T. Ishida, Y. Mori, R. Yamada, K. Torii, in Proceedings of International Reliability Physics Symposium (2008), pp. 541–546. https://doi.org/10.1109/RELPHY.2008.4558943

  23. S.O. Toh, Y. Tsukamoto, Z. Guo, L. Jones, T.J. King Liu, B. Nikolic, in International Electron Devices Meeting Technical Digest (2009), pp. 767–770. https://doi.org/10.1109/TED.2009.5424228

  24. M. Tanizawa, S. Ohbayashi, T. Okagaki, K. Sonoda, K. Eikyu, Y. Hirano, K. Ishikawa, O. Tsuchiya, Y. Inoue, in Symposium on VLSI Circuits Digest of Technical Papers (2010), pp. 95–96. https://doi.org/10.1109/VLSIT.2010.5556184

  25. H.S. Wong, Y. Taur, in International Electron Devices Meeting Technical Digest (1993), pp. 705–708. https://doi.org/10.1109/IEDM.1993.347215

  26. A. Asenov, IEEE Trans. Electron Devices 45, 2505 (1998). https://10.1109/16.735728

    Article  Google Scholar 

  27. A. Asenov, A.R. Brown, J.H. Davies, S. Saini, IEEE Trans. Comput. Aided Des. 18, 1558 (1999). https://doi.org/10.1109/43.806802

    Article  Google Scholar 

  28. A. Asenov, S. Saini, IEEE Trans. Electron Devices 46, 1718 (1999). https://doi.org/10.1109/16.777162

    Article  Google Scholar 

  29. L.K.J. Vandamme, D. Sodini, Z. Gingl, Solid State Electron. 42, 901 (1998). https://doi.org/10.1016/S0038-1101(98)00105-1

    Article  Google Scholar 

  30. A. Asenov, R. Balasubramaniam, A.R. Brown, J.H. Davies, S. Saini, in International Electron Devices Meeting 2000. Technical Digest (2000), pp. 279–282. https://doi.org/10.1109/IEDM.2000.904311

  31. A. Asenov, R. Balasubramaniam, A.R. Brown, J.H. Davies, IEEE Trans. Electron Devices 50, 839 (2003). https://doi.org/10.1109/TED.2003.811418

    Article  Google Scholar 

  32. A. Asenov, A.R. Brown, J.H. Davies, S. Kaya, G. Slavcheva, IEEE Trans. Electron Devices 50, 1837 (2003). https://doi.org/10.1109/TED.2003.815862

    Article  Google Scholar 

  33. C. Zambelli, P. Olivo, in Inside Solid-State Drives (SSD)s, ed. by R. Micheloni, A. Marelli, K. Eshghi (Springer, Berlin, 2013), chap. 8, pp. 203–231. https://doi.org/10.1007/978-94-007-5146-0_8

  34. R. Shirota, in Advances in Non-volatile Memory and Storage Technology, ed. by Y. Nishi (Elsevier, Amsterdam 2014), chap. 2, pp. 27–74. https://doi.org/10.1533/9780857098092.1.27

  35. S. Aritome, NAND Flash Memory Technologies (John Wiley & Sons, Hoboken, 2015). https://doi.org/10.1002/9781119132639

    Book  Google Scholar 

  36. R. Micheloni (ed.), 3D Flash memories (Springer, Berlin, 2016). https://doi.org/10.1007/978-94-017-7512-0

    Google Scholar 

  37. C. Monzio Compagnoni, A. Goda, A.S. Spinelli, P. Feeley, A.L. Lacaita, A. Visconti, Proc. IEEE 105, 1609 (2017). https://doi.org/10.1109/JPROC.2017.2665781

    Article  Google Scholar 

  38. A.S. Spinelli, C. Monzio Compagnoni, A.L. Lacaita, Computers 6, 16 (2017). https://doi.org/10.3390/computers6020016

    Article  Google Scholar 

  39. C. Monzio Compagnoni, R. Gusmeroli, A.S. Spinelli, A.L. Lacaita, M. Bonanomi, A. Visconti, IEEE Trans. Electron Devices 55, 388 (2008). https://doi.org/10.1109/TED.2007.910605

    Article  Google Scholar 

  40. C. Monzio Compagnoni, A.S. Spinelli, S. Beltrami, M. Bonanomi, A. Visconti, IEEE Electron Device Lett. 29, 941 (2008). https://doi.org/10.1109/LED.2008.2000964

    Article  Google Scholar 

  41. C. Monzio Compagnoni, R. Gusmeroli, A.S. Spinelli, A.L. Lacaita, M. Bonanomi, A. Visconti, in Proceedings of International Reliability Physics Symposium (2007), pp. 161–166. https://doi.org/10.1109/IRPS.2007.RELPHY.2007.369886

  42. A.S. Spinelli, C. Monzio Compagnoni, R. Gusmeroli, M. Ghidotti, A. Visconti, Jpn. J. Appl. Phys. 47, 2598 (2008). https://doi.org/10.1143/JJAP.47.2598

    Article  Google Scholar 

  43. K. Seidel, R. Hoffmann, D.A. Löhr, T. Melde, M. Czernohorsky, J. Paul, M.F. Beug, V. Beyer, in Proceedings of Non-Volatile Memory Technology Symposium (NVMTS) (2009), pp. 67–71. https://doi.org/10.1109/NVMT.2009.5429788

  44. B.-S. Jo, H.J. Kang, S.-M-Joe, M.K. Jeong, K.R. Han, S.K. Park, B.G. Park, J.H. Lee, Jpn. J. Appl. Phys. 52, 04CA07 (2013). https://doi.org/10.7567/JJAP/52.04CA07

  45. C. Miccoli, G.M. Paolucci, C. Monzio Compagnoni, A.S. Spinelli, A. Goda, in Proceedings of International Reliability Physics Symposium (2015), pp. MY.9.1–MY.9.6. https://doi.org/10.1109/IRPS.2015.7112812

  46. W. Kwon, Y.H. Song, Y. Cai, W. Ryu, Y. Jang, S. Shin, J. Jun, S.A. Lee, C.K. Park, W.S. Lee, in Proceedings of Non-Volatile Semiconductor Memory Workshop (2008), pp. 20–21. https://doi.org/10.1109/NVSMW.2008.11

  47. R.V. Wang, Y.H. Lee, Y.L.R. Lu, W. McMahon, S. Hu, A. Ghetti, IEEE Trans. Electron Devices 56, 2107 (2009). https://doi.org/10.1109/TED.2009.2026116

    Article  Google Scholar 

  48. H. An, K. Kim, S. Jung, H. Yang, Y. Song, Jpn. J. Appl. Phys. 49, 114302 (2010). https://doi.org/10.1143/JJAP.49.114302

    Article  Google Scholar 

  49. C.H. Lee, I.C. Yang, C. Lee, C.H. Cheng, L.H. Chong, K.F. Chen, J.S. Huang, S.H. Ku, N.K. Zous, I.J. Huang, T.T. Han, M.S. Chen, W.P. Lu, K.C. Chen, T. Wang, C.Y. Lu, in Proceedings of International Reliability Physics Symposium (2011), pp. 6B.3.1–6B.3.5. https://doi.org/10.1109/IRPS.2011.5784549

  50. T. Kim, D. He, K. Morinville, K. Sarpatwari, B. Millemon, A. Goda, J. Kessenich, IEEE Electron Dev. Lett. 32, 999 (2011). https://doi.org/10.1109/LED.2011.2152362

    Article  Google Scholar 

  51. T. Kim, N. Franklin, C. Srinivasan, P. Kalavade, A. Goda, IEEE Electron Dev. Lett. 32, 1185 (2011). https://doi.org/10.1109/LED.2011.2159573

    Article  Google Scholar 

  52. A. Ghetti, S.M. Amoroso, A. Mauri, C. Monzio Compagnoni, IEEE Trans. Electron Devices 59, 309 (2012). https://doi.org/10.1109/TED.2011.2175399

    Article  Google Scholar 

  53. S.M. Amoroso, A. Ghetti, A.R. Brown, A. Mauri, C. Monzio Compagnoni, A. Asenov, IEEE Trans. Electron Devices 59, 2774 (2012). https://doi.org/10.1109/TED.2012.2208224

    Article  Google Scholar 

  54. F.H. Li, R. Shirota, Jpn. J. Appl. Phys. 52, 074201 (2013). https://doi.org/10.7567/JJAP.52.074201

    Article  Google Scholar 

  55. S. Kim, M. Lee, G.B. Choi, J. Lee, Y. Lee, M. Cho, K.O. Ahn, J. Kim, in Proceedings of International Reliability Physics Symposium (2015), pp. MY.8.1–MY.8.4

    Google Scholar 

  56. T. Tomita, K. Miyaji, Jpn. J. Appl. Phys. 54, 04DD02 (2015). https://doi.org/10.7567/JJAP.54.04DD02

  57. S.M. Joe, J.H. Yi, S.K. Park, H.I. Kwon, J.H. Lee, IEEE Electron Device Lett. 31, 635 (2010). https://doi.org/10.1109/LE.2010.2047235

    Article  Google Scholar 

  58. S.M. Joe, J.H. Yi, S.K. Park, H. Shin, B.G. Park, Y.J. Park, J.H. Lee, IEEE Trans. Electron Devices 58, 67 (2011). https://doi.org/10.1109/TED.2010.2088126

    Article  Google Scholar 

  59. S.M. Joe, M.K. Jeong, B.S. Jo, K.R. Han, S.K. Park, J.H. Lee, IEEE Trans. Electron Devices 59, 3568 (2012). https://doi.org/10.1109/TED.2012.2219866

    Article  Google Scholar 

  60. S.M. Joe, J.H. Bae, C.H. Park, J.H. Lee, Semicond. Sci. Technol. 29, 125013 (2014). https://doi.org/10.1088/0268-1242/29/12/125013

    Article  Google Scholar 

  61. H. Miki, N. Tega, M. Yamaoka, D.J. Frank, A. Bansal, M. Kobayashi, K. Cheng, C.P. D’Emic, Z. Ren, S. Wu, J.B. Yau, Y. Zhu, M.A. Guillorn, D.G. Park, W. Haensch, E. Leobandung, K. Torii, in International Electron Devices Meeting Technical Digest (2012), pp. 450–453. https://doi.org/10.1109/IEDM.2012.6479071

  62. T. Grasser, Microelectron. Reliab. 52, 39 (2012). https://doi.org/10.1016/j.microrel.2011.09.002

    Article  Google Scholar 

  63. A. Ghetti, M. Bonanomi, C. Monzio Compagnoni, A.S. Spinelli, A.L. Lacaita, A. Visconti, in Proceedings of International Reliability Physics Symposium (2008), pp. 610–615. https://doi.org/10.1109/RELPHY.2008.4558954

  64. A. Ghetti, C. Monzio Compagnoni, A.S. Spinelli, A. Visconti, IEEE Trans. Electron Devices 56, 1746 (2009). https://doi.org/10.1109/TED.2009.2024031

    Article  Google Scholar 

  65. C.L. Alexander, A.R. Brown, J.R. Watling, A. Asenov, IEEE Trans. Nanotechnol. 4, 339 (2005). https://doi.org/10.1109/TNANO.2005.846929

    Article  Google Scholar 

  66. C. Alexander, A.R. Brown, J.R. Watling, A. Asenov, Solid State Electron. 49, 733 (2005). https://doi.org/10.1016/j.sse.2004.10.012

    Article  Google Scholar 

  67. U. Kovac, C. Alexander, G. Roy, C. Riddet, B. Cheng, A. Asenov, IEEE Trans. Electron Devices 57, 2418 (2010). https://doi.org/10.1109/TED.2010.2062517

    Article  Google Scholar 

  68. U. Kovac, C. Alexander, A. Asenov, in Proceedings of International Workshop on Computational Electronics (2010), pp. 235–238. https://doi.org/10.1109/IWCE.2010.5677971

  69. A. Asenov, G. Slavcheva, A.R. Brown, J.H. Davies, S. Saini, IEEE Trans. Electron Devices 48, 722 (2001). https://doi.org/10.1109/16.915703

    Article  Google Scholar 

  70. A. Ghetti, C. Monzio Compagnoni, F. Biancardi, A.L. Lacaita, S. Beltrami, L. Chiavarone, A.S. Spinelli, A. Visconti, in International Electron Devices Meeting Technical Digest (2008), pp. 835–838. https://doi.org/10.1109/IEDM.2008.4796827

  71. K. Abe, A. Teramoto, S. Watabe, T. Fujisawa, S. Sugawa, Y. Kamata, K. Shibusawa, T. Ohmi, Jpn. J. Appl. Phys. 49, 04DC07 (2010). https://doi.org/10.1143/JJAP.49.04DC07

  72. S. Machlup, J. Appl. Phys. 25, 341 (1954). https://doi.org/10.1063/1.1721637

    Article  Google Scholar 

  73. Y. Yuzhelevski, M. Yuzhelevski, G. Jung, Rev. Sci. Instrum. 71, 1681 (2000). https://doi.org/10.1063/1.1150519

    Article  Google Scholar 

  74. W. Goes, M. Karner, V. Sverdlov, T. Grasser, IEEE Trans. Dev. Mat. Reliab. 8, 491 (2008). https://doi.org/10.1109/TDMR.2008.2005247

    Article  Google Scholar 

  75. D. Veksler, G. Bersuker, H. Park, C. Young, K.Y. Lim, W. Taylor, in Proceedings of International Integrated Reliability Workshop (2009), pp. 102–105. https://doi.org/10.1109/IRWS.2009.5383021

  76. J. G, D. Popescu, P. Lugli, M.J. Häufel, W. Weinreich, A. Kersch, Phys. Rev. B 85, 045303–1–045303–8 (2012). https://doi.org/10.1103/PhysRevB.85.045303

  77. K.P. McKenna, J. Blumberger, Microelectron. Eng. 147, 235 (2015). https://doi.org/10.1016/j.mee.2015.04.009

    Article  Google Scholar 

  78. J.P. Campbell, J. Qin, K.P. Cheung, L.C. Yu, J.S. Suehle, A. Oates, K. Sheng, in Proceedings of International Reliability Physics Symposium (2009), pp. 382–388

    Google Scholar 

  79. J.P. Campbell, L.C. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, K. Sheng, in Proceedings of International Conference on IC Design & Technology (2009), pp. 17–20

    Google Scholar 

  80. K. Abe, A. Teramoto, S. Sugawa, T. Ohmi, in Proceedings of International Reliability Physics Symposium (2011), pp. 381–386. https://doi.org/10.1109/IRPS.2011.5784503

  81. A. Yonezawa, A. Teramoto, T. Obara, R. Kuroda, S. Sugawa, T. Ohmi, in Proceedings of International Reliability Physics Symposium (2013), pp. XT.11.1–XT.11.6. https://doi.org/10.1109/IRPS.2013.6532126

  82. S. Guo, P. Ren, R. Wang, Z. Yu, M. Luo, X. Zhang, R. Huang, in Proceedings of International Reliability Physics Symposium (2014), pp. XT.14.1–XT.14.4. https://doi.org/10.1109/IRPS.2014.6861191

  83. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer, in Proceedings of International Reliability Physics Symposium (2014), pp. 4A.5.1–4A.5.7. https://doi.org/10.1109/IRPS.2014.6860643

  84. J. Chen, Y. Higashi, K. Kato, Y. Mitani, in Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (2014), pp. 164–165. https://doi.org/10.1109/VLSIT.2014.6894418

  85. M.J. Chen, K.C. Tu, H.H. Wang, C.L. Chen, S.Y. Lai, Y.S. Liu, IEEE Trans. Electron Devices 61, 2495 (2014). https://doi.org/10.1109/TED.2014.2323259

    Article  Google Scholar 

  86. M.J. Chen, K.C. Tu, L.Y. Chuang, H.H. Wang, IEEE Electron Dev. Lett. 36, 217 (2015). https://doi.org/10.1109/LED.2015.2388787

    Article  Google Scholar 

  87. W. Goes, Y. Wimmer, A.M. El-Sayed, G. Rezpa, M. Jech, A.L. Schluger, T. Grasser, Microelectron. Reliab. 87, 286 (2018). https://doi.org/10.1016/j.microrel.2017.12.021

    Article  Google Scholar 

  88. N. Castellani, C. Monzio Compagnoni, A. Mauri, A.S. Spinelli, A.L. Lacaita, IEEE Trans. Electron Devices 59, 2488 (2012). https://doi.org/10.1109/TED.2012.2202910

    Article  Google Scholar 

  89. C. Monzio Compagnoni, N. Castellani, A. Mauri, A.S. Spinelli, A.L. Lacaita, IEEE Trans. Electron Devices 59, 2495 (2012). https://doi.org/10.1109/TED.2009.2203412

    Article  Google Scholar 

  90. F. Adamu-Lema, C. Monzio Compagnoni, S.M. Amoroso, N. Castellani, L. Gerrer, S. Markov, A.S. Spinelli, A.L. Lacaita, A. Asenov, IEEE Trans. Electron Devices 60, 833 (2013). https://doi.org/10.1109/TED.2012.2230004

    Article  Google Scholar 

  91. T. Grasser, B. Kaczer, W. Goes, H. Reisinger, T. Aichinger, P. Hehenberger, P.J. Wagner, F. Schanovsky, J. Franco, M.T. Luque, M. Nelhiebel, IEEE Trans. Electron Devices 58, 3652 (2011). https://doi.org/10.1109/TED.2011.2164543

    Article  Google Scholar 

  92. T. Grasser, W. Goes, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, in International Electron Devices Meeting Technical Digest (2014), pp. 530–533. https://doi.org/10.1109/IEDM.2014.7047093

  93. G.M. Paolucci, C. Monzio Compagnoni, C. Miccoli, A.S. Spinelli, A.L. Lacaita, A. Visconti, IEEE Trans. Electron Devices 61, 2802 (2014). https://doi.org/10.1109/TED.2014.2327661

    Article  Google Scholar 

  94. G.M. Paolucci, C. Monzio Compagnoni, C. Miccoli, A.S. Spinelli, A.L. Lacaita, A. Visconti, IEEE Trans. Electron Devices 61, 2811 (2014). https://doi.org/10.1109/TED.2014.2327149

    Article  Google Scholar 

  95. D. Resnati, G. Nicosia, G.M. Paolucci, A. Visconti, C. Monzio Compagnoni, IEEE Trans. Electron Devices 63, 4753 (2016). https://doi.org/10.1109/TED.2016.2617888

    Article  Google Scholar 

  96. D. Resnati, G. Nicosia, G.M. Paolucci, A. Visconti, C. Monzio Compagnoni, IEEE Trans. Electron Devices 63, 4761 (2016). https://doi.org/10.1109/TED.2016.2617890

    Article  Google Scholar 

  97. T. Tanaka, M. Helm, T. Vali, R. Ghodsi, K. Kawai, J.K. Park, S. Yamada, F. Pan, Y. Einaga, A. Ghalam, T. Tanzawa, J. Guo, T. Ichikawa, E. Yu, S. Tamada, T. Manabe, J. Kishimoto, Y. Oikawa, Y. Takashima, H. Kuge, M. Morooka, A. Mohammadzadeh, J. Kang, J. Tsai, E. Sirizotti, E. Lee, L. Vu, Y. Liu, H. Choi, K. Cheon, D. Song, D. Shin, J.H. Yun, M. Piccardi, K.F. Chan, Y. Luthra, D. Srinivasan, S. Deshmukh, K. Kavalipurapu, D. Nguyen, G. Gallo, S. Ramprasad, M. Luo, Q. Tang, M. Incarnati, A. Macerola, L. Pilolli, L. De Santis, M. Rossini, V. Moschiano, G. Santin, B. Tronca, H. Lee, V. Patel, T. Pekny, A. Yip, N. Prabhu, P. Sule, T. Bemalkhedkar, K. Upadhyayula, C. Jaramillo, in International Solid-State Circuits Conference Digest Technical Papers (2016), pp. 142–143. https://doi.org/10.1109/ISSCC.2016.7417947

  98. C. Kim, J.H. Cho, W. Jeong, I.H. Park, H.W. Park, D.H. Kim, D. Kang, S. Lee, J.S. Lee, W. Kim, J. Park, Y.L. Ahn, J. Lee, J.H. Lee, S. Kim, H.J. Yoon, J. Yu, N. Choi, Y. Kwon, N. Kim, H. Jang, J. Park, S. Song, Y. Park, J. Bang, S. Hong, B. Jeong, H.J. Kim, C. Lee, Y.S. Min, I. Lee, I.M. Kim, S.H. Kim, D. Yoon, K.S. Kim, Y. Choi, M. Kim, H. Kim, P. Kwak, J.D. Ihm, D.S. Byeon, J.Y. Lee, K.T. Park, K.H. Kyung, in International Solid-State Circuits Conference Digest Technical Papers (2017), pp. 202–204. https://doi.org/10.1109/ISSCC.2017.7870331

  99. H. Maejima, K. Kanda, S. Fujimura, T. Takagiwa, S. Ozawa, J. Sato, Y. Shindo, M. Sato, N. Kanagawa, J. Musha, S. Inoue, K. Sakurai, N. Morozumi, R. Fukuda, Y. Shimizu, T. Hashimoto, X. Li, Y. Shimizu, K. Abe, T. Yasufuku, T. Minamoto, H. Yoshihara, T. Yamashita, K. Satou, T. Sugimoto, F. Kono, M. Abe, T. Hashiguchi, M. Kojima, Y. Suematsu, T. Shimizu, A. Imamoto, N. Kobayashi, M. Miakashi, K. Yamaguchi, S. Bushnaq, H. Haibi, M. Ogawa, Y. Ochi, K. Kubota, T. Wakui, D. He, W. Wang, H. Minagawa, T. Nishiuchi, H. Nguyen, K.H. Kim, K. Cheah, Y. Koh, F. Lu, V. Ramachandra, S. Rajendra, S. Choi, K. Payak, N. Raghunathan, S. Georgakis, H. Sugawara, S. Lee, T. Futatsuyama, K. Hosono, N. Shibata, T. Hisada, T. Kaneko, H. Nakamura, in International Solid-State Circuits Conference Digest Technical Papers (2018), pp. 336–338. https://doi.org/10.1109/ISSCC.2018.8310321

  100. S. Lee, C. Kim, M. Kim, S. m. Joe, J. Jang, S. Kim, K. Lee, J. Kim, J. Park, H.J. Lee, M. Kim, S. Lee, S. Lee, J. Bang, D. Shin, H. Jang, D. Lee, N. Kim, J. Jo, J. Park, S. Park, Y. Rho, Y. Park, H. j. Kim, C.A. Lee, C. Yu, Y. Min, M. Kim, K. Kim, S. Moon, H. Kim, Y. Choi, Y. Ryu, J. Choi, M. Lee, J. Kim, G.S. Choo, J.D. Lim, D.S. Byeon, K. Song, K.T. Park, K. h. Kyung, in International Solid-State Circuits Conference Digest Technical Papers (2018), pp. 340–342. https://doi.org/10.1109/ISSCC.2018.8310323

  101. G.J. Hemink, T. Tanaka, T. Endoh, S. Aritome, R. Shirota, in Symposium on VLSI Technology. Digest of Technical Papers (1995), pp. 129–130. https://doi.org/10.1109/VLSIT.1995.520891

  102. R. Micheloni, L. Crippa, in Advances in Non-volatile Memory and Storage Technology, ed. by Y. Nishi (Woodhead Publishing, Sawston, 2014), chap. 3, pp. 75–119. https://doi.org/10.1533/9780857098092.1.75

  103. C. Monzio Compagnoni, M. Ghidotti, A.L. Lacaita, A.S. Spinelli, A. Visconti, IEEE Electron Dev. Lett. 30, 984 (2009). https://doi.org/10.1109/LED.2009.2026658

    Article  Google Scholar 

  104. C. Monzio Compagnoni, A.S. Spinelli, R. Gusmeroli, S. Beltrami, A. Ghetti, A. Visconti, IEEE Trans. Electron Devices 55, 2695 (2008). https://doi.org/10.1109/TED.2008.2003230

    Article  Google Scholar 

  105. C. Monzio Compagnoni, R. Gusmeroli, A.S. Spinelli, A. Visconti, IEEE Trans. Electron Devices 55, 3192 (2008). https://doi.org/10.1109/TED.2008.2003332

    Article  Google Scholar 

  106. G.M. Paolucci, C. Monzio Compagnoni, A.S. Spinelli, A.L. Lacaita, A. Goda, IEEE Trans. Electron Devices 62, 1491 (2015). https://doi.org/10.1109/TED.2015.2414711

    Article  Google Scholar 

  107. S.H. Shin, D.K. Shim, J.Y. Jeong, O.S. Kwon, S.Y. Yoon, M.H. Choi, T.Y. Kim, H.W. Park, H.J. Yoon, Y.S. Song, Y.H. Choi, S.W. Shim, Y.L. Ahn, K.T. Park, J.M. Han, K.H. Kyung, Y.H. Jun, in Symposium on VLSI Circuits Technical Digest Papers (2012), pp. 132–133. https://doi.org/10.1109/VLSIC.2012.6243825

  108. T. Endoh, K. Kinoshita, T. Tanigami, Y. Wada, K. Sato, K. Yamada, T. Yokoyama, N. Takeuchi, K. Tanaka, N. Awaya, K. Sakiyama, F. Masuoka, in International Electron Devices Meeting Technical Digest (2001), pp. 33–36. https://doi.org/10.1109/IEDM.2001.979396

  109. S.M. Jung, J. Jang, W. Cho, H. Cho, J. Jeong, Y. Chang, J. Kim, Y. Rah, Y. Son, J. Park, M.S. Song, K.H. Kim, J.S. Lim, K. Kim, in International Electron Devices Meeting Technical Digest (2006), pp. 37–40. https://doi.org/10.1109/IEDM.2006.346902

  110. E.K. Lai, H.T. Lue, Y.H. Hsiao, J.Y. Hsieh, C.P. Lu, S.Y. Wang, L.W. Yang, T. Yang, K.C. Chen, J. Gong, K.Y. Hsieh, R. Liu, C.Y. Lu, in International Electron Devices Meeting Technical Digest (2006), pp. 41–44. https://doi.org/10.1109/IEDM.2006.346903

  111. K.T. Park, D. Kim, S. Hwang, M. Kang, H. Cho, Y. Jeong, Y.I. Seo, J. Jang, H.S. Kim, S.M. Jung, Y.T. Lee, C. Kim, W.S. Lee, in International Solid-State Circuits Conference – Digest of Technical Papers (2008), pp. 510–511. https://doi.org/10.1109/ISSCC.2008.4523281

  112. H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y. Fukuzumi, M. Sato, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, A. Nitayama, in Symposium on VLSI Technology Technical Digest (2007), pp. 14–15. https://doi.org/10.1109/VLSIT.2007.4339708

  113. K.T. Park, J.M. Han, D. Kim, S. Nam, K. Choi, M.-S. Kim, P. Kwak, D. Lee, Y.H. Choi, K.M. Kang, M.H. Choi, D.H. Kwak, H.W. Park, S.W. Shim, H.J. Yoon, D. Kim, S.W. Park, K. Lee, K. Ko, D.K. Shim, Y.L. Ahn, J. Park, J. Ryu, D. Kim, K. Yun, J. Kwon, S. Shin, D. Youn, W. tae Kim, T. Kim, S.J. Kim, S. Seo, H.G. Kim, D.S. Byeon, H.J. Yang, M. Kim, M.S. Kim, J. Yeon, J. Jang, H.S. Kim, W. Lee, D. Song, S. Lee, K.H. Kyung, J.H. Choi, in International Solid-State Circuits Conference Digest of Technical Papers (2014), pp. 334–335. https://doi.org/10.1109/ISSCC.2014.6757458

  114. K.T. Park, S. Nam, D. Kim, P. Kwak, D. Lee, Y.H. Choi, M.H. Choi, D.H. Kwak, D.H. Kim, M.S. Kim, H.W. Park, S.W. Shim, K.M. Kang, S.W. Park, K. Lee, H.J. Yoon, K. Ko, D.K. Shim, Y.L. Ahn, J. Ryu, D. Kim, K. Yun, J. Kwon, S. Shin, D.S. Byeon, K. Choi, J.M. Han, K.H. Kyung, J.H. Choi, K. Kim, IEEE J. Solid State Circuits 50, 204 (2015). https://doi.org/10.1109/JSSC.2015.2352293

    Article  Google Scholar 

  115. Y. Fukuzumi, R. Katsumata, M. Kito, M. Kido, M. Sato, H. Tanaka, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, A. Nitayama, in International Electron Devices Meeting Technical Digest (2007), pp. 449–452. https://doi.org/10.1109/IEDM.2007.4418970

  116. S. Whang, K. Lee, D. Shin, B. Kim, M. Kim, J. Bin, J. Han, S. Kim, B. Lee, Y. Jung, S. Cho, C. Shin, H. Yoo, S. Choi, K. Hong, S. Aritome, S. Park, S. Hong, in International Electron Devices Meeting Technical Digest (2010), pp. 668–671. https://doi.org/10.1109/IEDM.2010.5703447

  117. Y. Noh, Y. Ahn, H. Yoo, B. Han, S. Chung, K. Shim, K. Lee, S. Kwak, S. Shin, I. Choi, S. Nam, G. Cho, D. Sheen, S. Pyi, J. Choi, S. Park, J. Kim, S. Lee, S. Aritome, S. Hong, S. Park, in Symposium on VLSI Technology Technical Digest (2012), pp. 19–20. https://doi.org/10.1109/VLSIT.2012.6242440

  118. S. Aritome, S. Whang, K. Lee, D. Shin, B. Kim, M. Kim, J. Bin, J. Han, S. Kim, B. Lee, Y. Jung, S. Cho, C. Shin, H. Yoo, S. Choi, K. Hong, S. Park, S. Hong, Solid State Electron. 79, 166 (2013). https://doi.org/10.1016/j.sse.2012.07.005

    Article  Google Scholar 

  119. S. Aritome, Y. Noh, H. Yoo, E.S. Choi, H.S. Joo, Y. Ahn, B. Han, S. Chung, K. Shim, K. Lee, S. Kwak, S. Shin, I. Choi, S. Nam, G. Cho, D. Sheen, S. Pyi, J. Choi, S. Park, J. Kim, S. Lee, S. Hong, S. Park, T. Kikkawa, IEEE Trans. Electron Devices 60, 1327 (2013). https://doi.org/10.1109/TED.2013.2247606

    Article  Google Scholar 

  120. K. Parat, C. Dennison, in International Electron Devices Meeting Technical Digest (2015), pp. 48–51. https://doi.org/10.1109/IEDM.2015.7409618

  121. M. Sako, Y. Watanabe, T. Nakajima, J. Sato, K. Muraoka, M. Fujiu, F. Kouno, M. Nakagawa, M. Masuda, K. Kato, Y. Terada, Y. Shimizu, M. Honma, A. Imamoto, T. Araya, H. Konno, T. Okanaga, T. Fujimura, X. Wang, M. Muramoto, M. Kamoshida, M. Kohno, Y. Suzuki, T. Hashiguchi, T. Kobayashi, M. Yamaoka, R. Yamashita, in International Solid-State Circuits Conference – (ISSCC) Digest of Technical Papers (2015), pp. 128–129. https://doi.org/10.1109/ISSCC.2015.7062959

  122. D. Kang, W. Jeong, C. Kim, D.H. Kim, Y.S. Cho, K.T. Kang, J. Ryu, K.M. Kang, S. Lee, W. Kim, H. Lee, J. Yu, N. Choi, D.S. Jang, J.D. Ihm, D. Kim, Y.S. Min, M.S. Kim, A.S. Park, J.I. Son, I.M. Kim, P. Kwak, B.K. Jung, D.S. Lee, H. Kim, H.J. Yang, D.S. Byeon, K.T. Park, K.H. Kyung, J.H. Choi, in International Solid-State Circuits Conference – (ISSCC) Digest of Technical Papers (2016), pp. 130–131. https://doi.org/10.1109/ISSCC.2016.7417941

  123. S. Lee, J.Y. Lee, I.H. Park, J. Park, S.W. Yun, M.S. Kim, J.H. Lee, M. Kim, K. Lee, T. Kim, B. Cho, D. Cho, S. Yun, J.N. Im, H. Yim, K.H. Kang, S. Jeon, S. Jo, Y.L. Ahn, S.M. Joe, S. Kim, D.K. Woo, J. Park, H.W. Park, Y. Kim, J. Park, Y. Choi, M. Hirano, J.D. Ihm, B. Jeong, S.K. Lee, M. Kim, H. Lee, S. Seo, H. Jeon, C.H. Kim, H. Kim, J. Kim, Y. Yim, H. Kim, D.S. Byeon, H.J. Yang, K.T. Park, K.H. Kyung, J.H. Choi, in International Solid-State Circuits Conference (ISSCC) Digest Technical Papers (2016), pp. 138–139. https://doi.org/10.1109/ISSCC.2016.7417945

  124. M.K. Jeong, S.M. Joe, C.S. Seo, K.R. Han, E. Choi, S.K. Park, J.H. Lee, in Symposium on VLSI Technology (VLSIT) Technical Digest (2012), pp. 55–56. https://doi.org/10.1109/VLSIT.2012.6242458

  125. M.K. Jeong, S.M. Joe, B.S. Jo, H.J. Kang, J.H. Bae, K.R. Han, E. Choi, G. Cho, S.K. Park, B.G. Park, J.H. Lee, in International Electron Devices Meeting Technical Digest (2012), pp. 207–210. https://doi.org/10.1109/IEDM.2012.6479010

  126. D. Kang, C. Lee, S. Hur, D. Song, J.H. Choi, in International Electron Devices Meeting Technical Digest (2014), pp. 367–370. https://doi.org/10.1109/IEDM.2014.7047052

  127. E. Nowak, J.H. Kim, H. Kwon, Y.G. Kim, J.S. Sim, S.H. Lim, D.S. Kim, K.H. Lee, Y.K. Park, J.H. Choi, C. Chung, in Symposium on VLSI Technology (VLSIT) Technical Digest (2012), pp. 21–22. https://doi.org/10.1109/VLSIT.2012.6242441

  128. Y.L. Chou, T. Wang, M. Lin, Y.W. Chang, L. Liu, S.W. Huang, W.J. Tsai, T.C. Lu, K.C. Chen, C.Y. Lu, IEEE Electron Dev. Lett. 37, 998 (2016). https://10.1109/LED.2016.2585860

    Article  Google Scholar 

  129. C.C. Hsieh, H.T. Lue, T.H. Hsu, P.Y. Du, K.H. Chiang, C.Y. Lu, in Symposium on VLSI Technology Technical Digest (2016), pp. 63–64. https://doi.org/10.1109/VLSIT.2016.7573386

  130. D. Resnati, A. Goda, G. Nicosia, C. Miccoli, A.S. Spinelli, C. Monzio Compagnoni, IEEE Electron Dev. Lett. 38, 461 (2017). https://10.1109/LED.2017/2675160

    Article  Google Scholar 

  131. G. Nicosia, A. Goda, A.S. Spinelli, C.Monzio Compagnoni, IEEE Electron Dev. Lett. 39, 1175 (2018). https://doi.org/10.1109/LED.2018.2847341

    Article  Google Scholar 

  132. P. Cappelletti, in International Electron Devices Meeting (IEDM) Technical Digest (2015), pp. 241–244. https://doi.org/10.1109/IEDM.2015.7409666

  133. A. Goda, C. Miccoli, C. Monzio Compagnoni, in International Electron Devices Meeting (IEDM) Technical Digest (2015), pp. 374–377. https://doi.org/10.1109/IEDM.2015.7409699

  134. G.M. Paolucci, A.S. Spinelli, C. Monzio Compagnoni, P. Tessariol, IEEE Trans. Electron Devices 63, 1871 (2016). https://doi.org/10.1109/TED.2016.2543605

    Article  Google Scholar 

  135. M. Toledano-Luque, R. Degraeve, P.J. Roussel, V. Luong, B. Tang, J.G. Lisoni, C.L. Tan, A. Arreghini, G. Van den bosch, G. Groeseneken, J. Van Houdt, in International Electron Devices Meeting Technical Digest (2013), pp. 562–565. https://doi.org/10.1109/IEDM.2013.6724676

  136. C.M. Lee, B.Y. Tsui, in Proceedings of International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (2013), pp. 47–48. https://doi.org/10.1109/VLSI-TSA.2013.6545598

  137. J.Y.W. Seto, J. Appl. Phys. 46, 5247 (1975). https://doi.org/10.1063/1.321593

    Article  Google Scholar 

  138. T. Hashimoto, M. Aoki, T. Yamanaka, Y. Kamigaki, T. Nishida, in Proceedings of 1994 VLSI Technology Symposium Technical Digest (1994), pp. 87–88. https://10.1109/VLSIT.1994.324442

    Google Scholar 

  139. R. Brederlow, W. Weber, C. Dahl, D. Schmitt-Landsiedel, R. Thewes, in International Electron Devices Meeting 1998. Technical Digest (1998), pp. 89–92. https://doi.org/10.1109/IEDM.1998.746286

  140. H.J. Kang, M.K. Jeong, S.M. Joe, J.H. Seo, S.K. Park, S.H. Jin, B.G. Park, J.H. Lee, in Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (2014), pp. 24–25. https://doi.org/10.1109/VLSIT.2014.6894348

  141. W.J. Tsai, W.L. Lin, C.C. Cheng, S.H. Ku, Y.L. Chou, L. Liu, S.W. Hwang, T.C. Lu, K.C. Chen, T. Wang, C.Y. Lu, in International Electron Devices Meeting. Technical Digest (2016), pp. 11.3.1–11.3.4. https://doi.org/10.1109/IEDM.2016.7838395

  142. M. Toledano-Luque, R. Degraeve, B. Kaczer, B. Tang, P.J. Roussel, P. Weckx, J. Franco, A. Arreghini, A. Suhane, G.S. Kar, G. Van den bosch, G. Groeseneken, J.V. Houdt, in International Electron Devices Meeting Technical Digest (2012), pp. 203–206. https://doi.org/10.1109/IEDM.2012.6479009

  143. S.Y. Kim, J.K. Park, W.S. Hwang, S.J. Lee, K.H. Lee, S.H. Pyi, B.J. Cho, J. Nanosci. Nanotech. 16, 5044 (2016). https://doi.org/10.1166/JNN.2016.12251

    Article  Google Scholar 

  144. A.R. Brown, G. Roy, A. Asenov, IEEE Trans. Electron Devices 54, 3056 (2007). https://doi.org/10.1109/TE.2007.907802

    Article  Google Scholar 

  145. M. Peisl, A.W. Wieder, IEEE trans. Electron Devices 30, 1792 (1983). https://doi.org/10.1109/T-ED.1983.21447

    Article  Google Scholar 

  146. D.M. Kim, A. Khondker, S.S. Ahmed, R.R. Shah, IEEE Trans. Electron Devices 31, 480 (1984). https://doi.org/10.1109/T-ED.1984.21554

    Article  Google Scholar 

  147. A.N. Khondker, D.M. Kim, S.S. Ahmed, R.R. Shah, IEEE Trans. Electron Devices 31, 493 (1984). https://doi.org/10.1109/T-ED.1984.21555

    Article  Google Scholar 

  148. G. Baccarani, B. Riccò, G. Spadini, J. Appl. Phys. 49, 5565 (1978). https://doi.org/10.1063/1.324477

    Article  Google Scholar 

  149. N.C.C. Lu, L. Gerzberg, C.Y. Lu, J.D. Meindl, IEEE Trans. Electron Devices 28, 818 (1981). https://doi.org/10.1109/T-ED.1981.20437

    Article  Google Scholar 

  150. Y.H. Hsiao, H.T. Lue, W.C. Chen, C.P. Chen, K.P. Chang, Y.H. Shih, B.Y. Tsui, C.Y. Lu, in International Electron Devices Meeting Technical Digest (2012), pp. 609–612. https://doi.org/10.1109/IEDM.2012.6479111

  151. Y.H. Hsiao, H.T. Lue, W.C. Chen, K.P. Chang, Y.H. Shih, B.Y. Tsui, K.Y. Hsieh, C.Y. Lu, IEEE Trans. Electron Devices 61, 2064 (2014). https://doi.org/10.1109/TED.2014.2318716

    Article  Google Scholar 

  152. C.W. Yang, P. Su, IEEE Trans. Electron Devices 61, 1211 (2014). https://doi.org/10.1109/TED.2014.2308951

    Article  Google Scholar 

  153. J. Kim, J. Lee, H. Oh, T. Rim, C.K. Baek, M. Meyyappan, J.S. Lee, in Proceedings of International Nanoelectronics Conference (INEC) (2014), pp. 66–68. https://doi.org/10.1109/INEC.2014.7460420

  154. P.Y. Wang, B.Y. Tsui, IEEE Trans. Electron Devices 62, 2488 (2015). https://doi.org/10.1109/TED.2015.2438001

    Article  Google Scholar 

  155. R. Degraeve, S. Clima, V. Putcha, B. Kaczer, P. Roussel, D. Linten, G. Groeseneken, A. Arreghini, M. Karner, C. Kernstock, Z. Stanojevic, G. Van den bosch, J. Van Houdt, A. Furnemont, A. Thean, in International Electron Devices Meeting (IEDM) Technical Digest (2015), pp. 121–124. https://doi.org/10.1109/IEDM.2015.7409636

  156. Z. Lun, L. Shen, Y. Cong, G. Du, X. Liu, Y. Wang, in Proceedings of Silicon Nanoelectronics Workshop (SNW) (2015), pp. 35–37

    Google Scholar 

  157. H. Oh, J. Kim, J. Lee, T. Rim, C.K. Baek, J.S. Lee, Microelectron. Eng. 149, 113 (2016). https://doi.org/10.1016/J.MEE.2015.09.018

    Article  Google Scholar 

  158. R. Degraeve, M. Toledano-Luque, A. Arreghini, B. Tang, E. Capogreco, J. Lisoni, P. Roussel, B. Kaczer, G. Van den bosch, G. Groeseneken, J. Van Houdt, in International Electron Devices Meeting Technical Digest (2013), pp. 558–561. https://doi.org/10.1109/IEDM.2013.6724675

  159. W.S. Yoo, T. Ishigaki, T. Ueda, K. Kang, N.Y. Kwak, D.S. Sheen, S.S. Kim, M.S. Ko, W.S. Shin, B.S. Lee, S.J. Yeom, S.K. Park, in Proceedings of Non-Volatile Memory Technology Symposium (NVMTS) (2014), pp. 44–47. https://doi.org/10.1109/NVMTS.2014.7060843

  160. I. Amit, D. Englander, D. Horvitz, Y. Sasson, Y. Rosenwaks, Nano Lett. 14, 6190 (2014). https://doi.org/10.1021/NL5024468

    Article  Google Scholar 

  161. A. Shamir, I. Amit, D. Englander, D. Horvitz, Y. Rosenwaks, Nanotechnology 26, 355201 (2015). https://doi.org/10.1088/0957-4484/26/35/355201

    Article  Google Scholar 

  162. D. He, N. Okada, C.M. Fortmann, I. Shimizu, J. Appl. Phys. 76, 4728 (1994). https://doi.org/10.1063/1.357240

    Article  Google Scholar 

  163. A.J. Walker, S.B. Herner, T. Kumar, E.H. Chen, IEEE Trans. Electron Devices 51, 1856 (2004). https://doi.org/10.1109/TED.2004.837388

    Article  Google Scholar 

  164. D. Resnati, A. Mannara, G. Nicosia, G.M. Paolucci, P. Tessariol, A.L. Lacaita, A.S. Spinelli, C. Monzio Compagnoni, in International Electron Devices Meeting (IEDM) Technical Digest (2017), pp. 103–106. https://doi.org/10.1109/IEDM.2017/8268329

  165. G. Nicosia, A. Mannara, D. Resnati, G.M. Paolucci, P. Tessariol, A.L. Lacaita, A.S. Spinelli, A. Goda, C. Monzio Compagnoni, in International Electron Devices Meeting (IEDM) Technical Digest (2017), pp. 521–524. https://doi.org/10.1109/IEDM.2017.8268434

  166. D. Resnati, A. Mannara, G. Nicosia, G.M. Paolucci, P. Tessariol, A.S. Spinelli, A.L. Lacaita, C. Monzio Compagnoni, IEEE Trans. Electron Devices 65, 3199 (2018). https://doi.org/10.1109/TED.2018.2838524

    Article  Google Scholar 

  167. G. Nicosia, A. Mannara, D. Resnati, G.M. Paolucci, P. Tessariol, A.S. Spinelli, A.L. Lacaita, A. Goda, C. Monzio Compagnoni, IEEE Trans. Electron Devices 65, 3207 (2018). https://doi.org/10.1109/TED.2018.2839904

    Article  Google Scholar 

  168. G. Fortunato, P. Migliorato, Appl. Phys. Lett. 49, 1025–1027 (1986). https://doi.org/10.1063/1.97460

    Article  Google Scholar 

  169. M. Hack, J.G. Shaw, P.G. LeComber, M. Willums, Jpn. J. Appl. Phys. 29, 2360 (1990). https://doi.org/10.1143/JJAP.29.L2360

    Article  Google Scholar 

  170. M.D. Jacunski, M.S. Shur, M. Hack, IEEE Trans. Electron Devices 43, 1433 (1996). https://doi.org/10.1109/16.535329

    Article  Google Scholar 

  171. M. Valdinoci, L. Colalongo, G. Baccarani, A. Pecora, I. Policicchio, G. Fortunato, F. Plais, P. Legagneux, C. Reita, D. Priba, Solid-State Electron. 41, 1363 (1997). https://doi.org/10.1016/S0038-1101(97)00130-5

    Article  Google Scholar 

  172. R. Degraeve, M. Toledano-Luque, A. Suhane, G. Van den bosch, A. Arreghini, B. Tang, B. Kaczer, P. Roussel, G.S. Kar, J. Van Houdt, G. Groeseneken, in International Electron Devices Meeting Technical Digest (2011), pp. 287–290. https://doi.org/10.1109/IEDM.2011.6131540

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Acknowledgements

The authors would like to acknowledge A. Visconti, P. Tessariol, E. Camerlenghi, and A. Goda from Micron Technology Inc. for the fruitful and long-lasting collaboration. Support from our former Ph.D. students C. Miccoli, G. Paolucci, D. Resnati and G. Nicosia is also gratefully acknowledged.

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  1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, Italy

    Alessandro S. Spinelli, Christian Monzio Compagnoni & Andrea L. Lacaita

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  1. Alessandro S. Spinelli
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  2. Christian Monzio Compagnoni
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  3. Andrea L. Lacaita
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Correspondence to Alessandro S. Spinelli .

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  1. Institute for Microelectronics, Technische Universität Wien, Wien, Austria

    Tibor Grasser

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Spinelli, A.S., Compagnoni, C.M., Lacaita, A.L. (2020). Random Telegraph Noise in Flash Memories. In: Grasser, T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-37500-3_6

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  • DOI: https://doi.org/10.1007/978-3-030-37500-3_6

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