Electrical Properties 5

Abstract

β-Gallium oxide is promising for use in semiconductor power devices . First, the type and character of crystal defects , such as dislocations and voids, are described. Next, I describe the fabrication and measurement of Schottky barrier diodes (SBD) on the entire surface and investigate the relation between the leakage current and defects , as revealed mainly by the etch-pit method. The dislocations that appeared on the (010) surface became SBD leakage paths, whereas the dislocations on the ($\bar{2}01$) and (001) surfaces apparently had no relation with the SBD leakage current. Voids that extend in [010] direction and appeared on all surface orientations did not affect the SBD leakage current .