Abstract
This paper is devoted to supercomputer simulations of transient anisotropic diffusion processes with recombination in GaN semiconductors containing a set of threading dislocations. The random walk on arbitrary parallelepipeds and cubes based on a Monte Carlo algorithm suggested by K. K. Sabelfeld is here applied to a cathodoluminescence imaging problem. The computational time for large diffusion lengths and large numbers of dislocations is of several hours. For this reason, we carried out a parallel implementation of the code by distributing diffusion particle trajectories among several MPI processes and OpenMP threads. The parallel code made it possible to obtain the transient cathodoluminescence intensity, the concentration of survived particles, and the flux to the dislocation surfaces. To verify the algorithm implementation, we compared the simulation results with those obtained in the isotropic case by means of the random-walk-on-spheres algorithm and also with the exact solution of the isotropic diffusion-reaction equation.
The work was supported by the ICMMG SB RAS (budget project No. 0315-2019-0002).
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MVS-10P cluster, JSCC RAS. http://www.jscc.ru
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Kireeva, A., Sabelfeld, K.K. (2019). Supercomputer Stochastic Simulation of Transient Anisotropic Diffusion-Reaction Processes with Application in Cathodoluminescence Imaging. In: Sokolinsky, L., Zymbler, M. (eds) Parallel Computational Technologies. PCT 2019. Communications in Computer and Information Science, vol 1063. Springer, Cham. https://doi.org/10.1007/978-3-030-28163-2_19
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