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Electrochemical Aspects of Chemical Mechanical Polishing

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Electrodeposition and Surface Finishing

Part of the book series: Modern Aspects of Electrochemistry ((MAOE,volume 57))

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Abstract

Metal and glass surfaces have been polished to high levels of planarity and tight tolerances for hundreds of years. The telescope of Galileo, for instance, was enabled by accurate glass lens polishing. Chemical Mechanical Polishing, also known as chemical mechanical planarization or CMP, was developed specifically for the semiconductor industry from the same historical principles, beginning in 1983 at IBM [1] with the successful planarization of reflown glass “bulges” on a wafer surface. Although reflown glass was never adopted as a commercial technique, and despite initial reluctance to incorporate the use of small particles into cleanroom technology, the use of CMP has flourished. Today, a typical integrated circuit is polished dozens of times during manufacture; the planarization of each device layer permits new layers to be built upon it, leading to devices with eight or more separate layers of metallization. CMP is thus industrially important as an enabler of new geometries, as well as a manufacturing technique in its own right.

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, University of Alberta, 9107 – 116 Street, Edmonton, AB, Canada, T6G 2 V4

    K. Cadien, H. Pirayesh, K. Dawkins & Z. Xu

  2. Portland Technology Development, Intel Corporation, Hillsboro, OR, USA

    L. Nolan

Authors
  1. K. Cadien
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  2. L. Nolan
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  3. H. Pirayesh
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  4. K. Dawkins
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  5. Z. Xu
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Corresponding author

Correspondence to K. Cadien .

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  1. Elchem Consulting Ltd., Edmonton, Alberta, Canada

    Stojan S. Djokić

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Cadien, K., Nolan, L., Pirayesh, H., Dawkins, K., Xu, Z. (2014). Electrochemical Aspects of Chemical Mechanical Polishing. In: Djokić, S. (eds) Electrodeposition and Surface Finishing. Modern Aspects of Electrochemistry, vol 57. Springer, New York, NY. https://doi.org/10.1007/978-1-4939-0289-7_6

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