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Emerging Multiferroic Memories

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Emerging Non-Volatile Memories

Abstract

Thus far in this book, we have focused on ferroelectric and magnetic spin torque transfer memories. In this chapter, we describe the recent discoveries in the emerging field of multiferroic-based memories. In the last decade, considerable attention has been focused on the search for and characterization of new multiferroic materials as scientists and researchers have been driven by the promise of exotic materials functionality (especially electric field control of ferromagnetism). In this chapter we develop a holistic picture of multiferroic materials, including details on the nature of order parameters and coupling in these materials, the scarcity of such materials, routes to create and control the properties in these materials, and prospects for these materials in next generation devices—with special attention given to memory applications.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of California, 210 Hearst Mining Building, Berkeley, CA, 94720, USA

    Lane W. Martin & R. Ramesh

  2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    Lane W. Martin & R. Ramesh

  3. Department of Materials Science and Engineering, National Chiao Tung University, HsinChu, Taiwan, 30010

    Ying-Hao Chu

  4. Department of Physics, University of California, Berkeley, CA, 94720, USA

    R. Ramesh

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  1. Lane W. Martin
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  3. R. Ramesh
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  1. Materials Science Division, Argonne National Laboratory, Lemont, Illinois, USA

    Seungbum Hong

  2. Materials Science & Engg Dept. and Bioengineering Dept., University of Texas-Dallas, Dallas, Texas, USA

    Orlando Auciello

  3. CMOS Technology Division, IMEC, Leuven, Belgium

    Dirk Wouters

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Martin, L.W., Chu, YH., Ramesh, R. (2014). Emerging Multiferroic Memories. In: Hong, S., Auciello, O., Wouters, D. (eds) Emerging Non-Volatile Memories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-7537-9_3

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