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Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving

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Quantum Dot Devices

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 13))

Abstract

The nonlinear optical response of self-assembled quantum dots (QD) is relevant to the application of QD-based devices in nonlinear optics, all-optical switching, slow light, and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer (WL) states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1240–1280 nm) and of InAlAs/GaAlAs QD at 780 nm is described and the first demonstration of the cw saturation of absorption in room temperature QD samples is discussed in detail.

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Acknowledgements

T.A. and A.T. were supported by EPSRC project EP/E025021, A.T. gratefully acknowledges current funding of Région Provence Alpes Cote d’Azur (DEB 10-924) and a travel grant from COST action MP0702. M.B. acknowledges partial support from project FIRB PhoCOS project n. RBFR08QIP5. We are grateful to Innolume GmbH for supplying the InAs devices, J.-M. Benoit, A. Lemaître, G. Patriarche, and K. Meunier for supplying the 780 nm devices, T. Maggipinto for supplying part of the numerical code, and R. Martin for computational support. S. Moore and T. Krauss were supplying broad-area samples for preliminary studies, and E. Esposito and G. McConnel gave us the opportunity to perform preliminary measurements in their lab.

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Authors and Affiliations

  1. SUPA and Department of Physics, University of Strathclyde, Glasgow G4 0NG, Scotland, UK

    T. Ackemann

  2. Université de Nice Sophia Antipolis, Institut Non-Linéaire de Nice, UMR 6618, 06560, Valbonne, France

    A. Tierno

  3. Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460, Marcoussis, France

    R. Kuszelewicz & S. Barbay

  4. CNISM e Dipartimento Interateneo di Fisica, via Amendola 173, 70126, Bari, Italy

    M. Brambilla

  5. SUPA and School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, Scotland, UK

    C. G. Leburn

  6. SUPA and School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, Scotland, UK

    C. T. A. Brown

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  1. T. Ackemann
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  1. Technology, State Key Laboratory of Electronic, University of Electronic Science and, Thin Film and Integrated Devices, Chengdu, 610054, China, People's Republic

    Zhiming M. Wang

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Ackemann, T. et al. (2012). Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving. In: Wang, Z. (eds) Quantum Dot Devices. Lecture Notes in Nanoscale Science and Technology, vol 13. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-3570-9_12

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