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Effect of doping Gd2O3 on dielectric and piezoelectric properties of BaZr0.1Ti0.9O3 ceramics by sol–gel method

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Abstract

The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O3 + xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 °C and doped with gadolinium ions of 0.5 mol% has uniform grain size and compact morphology. And the sample(1350 °C—0.5 mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.

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Acknowledgements

This work was supported by Science and Technology Support Project of Hebei Province, China (Grant No. 15211111), and the National Natural Science Foundation of China (Grant No. 51502075).

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Correspondence to Zhanshen Zheng.

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Kang, W., Zheng, Z., Li, Y. et al. Effect of doping Gd2O3 on dielectric and piezoelectric properties of BaZr0.1Ti0.9O3 ceramics by sol–gel method. J Mater Sci: Mater Electron 30, 2743–2749 (2019). https://doi.org/10.1007/s10854-018-0550-7

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  • DOI: https://doi.org/10.1007/s10854-018-0550-7

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