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Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells

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Abstract

In this work, p–i–n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were fabricated by using double p-type silicon oxide (p-SiOx) layers, and the power conversion efficiency (PCE) was increased from 7.79 to 9.10%. The optoelectronic properties and functions of p-SiOx layer in a-SiGe:H cells were measured and discussed. A window layer (~ 20 nm) was deposited and characterized to determine the optimal single p-SiOx layer parameters. After that, an ultra-thin contact layer (~ 4 nm) of p-SiOx was deposited in front of the window layer. Through comparative analyses between single and double p-SiOx layers, the performance of the device has greatly improved in open-circuit voltage (Voc), fill factor (FF) and short-circuit current density (Jsc). The optimization of interface contact between top transparent conductive oxide (TCO) and p-layer effectively improves the device efficiency. Finally, a-SiGe:H solar cell with high Voc = 750 mV, FF = 68.36% and Jsc = 17.75 mA/cm2 were fabricated successfully. A high efficiency of 9.10% has been achieved by double p-SiOx layers for a-SiGe:H thin film solar cell.

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References

  1. H. Tan, A. Jain, O. Voznyy, X. Lan, F.P. García de Arquer, J.Z. Fan, R. Quintero-Bermudez, M. Yuan, B. Zhang, Y. Zhao, F. Fan, P. Li, L.N. Quan, Y. Zhao, Z.-H. Lu, Z. Yang, S. Hoogland, E.H. Sargent, Science 355, 722 (2017)

    Article  Google Scholar 

  2. H. Tan, F. Che, M. Wei, I. Saidaminov, P. Todorović, D. Broberg, G. Walters, F. Tan, T. Zhuang, B. Sun, Z. Liang, H. Yuan, E. Fron, J. Kim, Z. Yang, O. Voznyy, M. Asta, E.H. Sargen, Nat. Commun. 9, 3100 (2018)

    Article  Google Scholar 

  3. X. Yang, L. Hu, H. Deng, K. Qiao, C. Hu, Z. Liu, S. Yuan, J. Khan, D. Li, J. Tang, H. Song, C. Cheng, Nano-Micro Lett. 9, 24 (2017)

    Article  Google Scholar 

  4. M. Que, L. Zhu, Y. Yang, J. Liu, P. Chen, W. Chen, X. Yin, W. Que, J. Power Sources 383, 42 (2018)

    Article  Google Scholar 

  5. N. Senthilkumar, A. Arulraj, E. Nandhakumar, M. Ganapathy, M. Vimalan, I. Vetha Potheher, J. Mater. Sci. 29, 12744 (2018)

    Google Scholar 

  6. H. Luo, X. Lin, X. Hou, L. Pan, S. Huang, X. Chen, Nano-Micro Lett. 9, 39 (2017)

    Article  Google Scholar 

  7. J. Cho, D.P. Pham, J. Jung, C. Shin, J. Park, S. Kim, A.H. Tuan, H. Le, S.M. Park, Iftiquar, J. Yi, Mater. Sci. Semicond. Process 41, 480 (2016)

    Article  Google Scholar 

  8. Z. Li, A.J. Letha, J.-F. Wei, M.-L. Lu, Y. Liu, H.-L. Hwang, Y. Zhang, Mater. Sci. Semicond. Process 75, 51 (2018)

    Article  Google Scholar 

  9. G.H. Wang, C.Y. Shi, L. Zhao, R.D. Hu, L.L. Li, G. Wang, J.W. Chen, H.W. Diao, W.J. Wang, Thin Solid Films 552, 180 (2014)

    Article  Google Scholar 

  10. B. Liu, L. Bai, X. Zhang, D. Zhang, C. Wei, J. Sun, Q. Huang, X. Chen, J. Ni, G. Wang, Y. Zhao, Sol. Energy Mater. Sol. C 128, 1 (2014)

    Article  Google Scholar 

  11. T. Krajangsang, S. Inthisang, A. Dousse, A. Moollakorn, A. Hongsingthong, S. Kittisontirak, P. Chinnavornrungsee, A. Limmanee, J. Sritharathikhun, K. Sriprapha, Opt. Mater. 51, 245 (2016)

    Article  Google Scholar 

  12. D.P. Pham, S. Kim, J. Park, A.T. Le, J. Cho, J. Jung, S.M. Iftiquar, J. Yi, Mater. Sci. Semicond. Process 56, 183 (2016)

    Article  Google Scholar 

  13. S.A. Shahahmadi, A. Aizan Zulkefle, A.K.M. Hasan, S.M. Rana, B. Bais, M. Akhtaruzzaman, A.R.M. Alamoud, N. Amin, Mater. Sci. Semicond. Process 56, 160 (2016)

    Article  Google Scholar 

  14. B. Yan, L. Zhao, B. Zhao, J. Chen, G. Wang, H. Diao, Y. Mao, W. Wang, Vacuum 89, 43 (2013)

    Article  Google Scholar 

  15. D.P. Pham, S. Kim, J. Park, A.H.T. Le, J. Cho, J. Yi, J. Alloy. Compd. 724, 400 (2017)

    Article  Google Scholar 

  16. G.H. Wang, C.Y. Shi, L. Zhao, B.J. Yan, G. Wang, J.W. Chen, Z.C. Li, H.W. Diao, W.J. Wang, Thin Solid Films 534, 591 (2013)

    Article  Google Scholar 

  17. J. Cho, S.M. Iftiquar, D.P. Pham, J. Jung, J. Park, S. Ahn, A.H.T. Le, J.S. Kim, J. Yi, Thin Solid Films 639, 56 (2017)

    Article  Google Scholar 

  18. A.H. Mahan, Y. Xu, L.M. Gedvilas, D.L. Williamson, Thin Solid Films 517, 3532 (2009)

    Article  Google Scholar 

  19. M. Stutzmann, R.A. Street, C.C. Tsai, J.B. Boyce, S.E. Ready, J. Appl. Phys. 66, 569 (1989)

    Article  Google Scholar 

  20. A.H. Mahan, P. Menna, R. Tsu, Appl. Phys. Lett. 51, 1167 (1987)

    Article  Google Scholar 

  21. D.P. Pham, S. Kim, A.H. Tuan Le, J. Park, J. Yi, J. Alloy. Compd. 762, 616 (2018)

    Article  Google Scholar 

  22. C. Jin-Won, P. Jun Woong, L. Yu Jin, A. Seh-Won, L. Heon-Min, O.O. Park, Jpn. J. Appl. Phys. 51, 10NB16 (2012)

    Article  Google Scholar 

  23. D. Lundszien, F. Finger, H. Wagner, Sol. Energy Mater. Sol. C 74, 365 (2002)

    Article  Google Scholar 

  24. M. Güneş, M.E.D. Yavas, J. Klomfass, F. Finger, J. Mater. Sci. 21, 153 (2010)

    Google Scholar 

  25. A. Lambertz, F. Finger, B. Holländer, J.K. Rath, R.E.I. Schropp, J. Non-cryst. Solids. 358, 1962 (2012)

    Article  Google Scholar 

  26. J.E. Lee, J.H. Park, J.-S. Cho, J.-W. Chung, J. Song, D. Kim, J.C. Lee, Thin Solid Films 520, 6007 (2012)

    Article  Google Scholar 

  27. P.-K. Chang, F.-J. Tsai, C.-H. Lu, C.-H. Yeh, N.-F. Wang, M.-P. Houng, Solid State Electron. 72, 48 (2012)

    Article  Google Scholar 

  28. H. Tan, P. Babal, M. Zeman, A.H.M. Smets, Sol. Energy Mater. Sol. C 132, 597 (2015)

    Article  Google Scholar 

  29. G. Wang, L. Zhao, H. Diao, W. Wang, Vacuum 89, 40 (2013)

    Article  Google Scholar 

  30. C. Ducros, H. Szambolics, F. Emieux, A. Pereira, Thin Solid Films 620, 10 (2016)

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by National Natural Science Foundation of China (No. 61274051).

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Authors and Affiliations

  1. Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Department of Micro/Nano Electronics, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China

    Xun Sun, Yijian Liu, Zhongli Li & Huey-Liang Hwang

  2. Centre for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan, ROC

    Huey-Liang Hwang

Authors
  1. Xun Sun
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  2. Yijian Liu
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  3. Zhongli Li
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  4. Huey-Liang Hwang
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Correspondence to Huey-Liang Hwang.

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Sun, X., Liu, Y., Li, Z. et al. Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells. J Mater Sci: Mater Electron 30, 1993–1997 (2019). https://doi.org/10.1007/s10854-018-0470-6

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  • DOI: https://doi.org/10.1007/s10854-018-0470-6

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