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Interfaces in New Materials pp 200–209Cite as

Electron Microscopy of Interfaces in New Materials

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Abstract

Electron microscopy and electron diffraction are shown to be most useful for the characterisation of different interfaces in new materials. High resolution microscopy provides atomic scale information on the local structure of such interfaces. These structural characteristics strongly influence the physical properties of the materials. We will study planar interfaces in the high Tc superconductor YBa2Cu3O7-δ, in silverhalogenides such as AgC1, in the luminescent Y1-x(Sr,Li)xTa04 and in semiconductor devices.

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Author notes

  1. A. De Veirman

    Present address: Philips Research Laboratories, Eindhoven, The Netherlands

Authors and Affiliations

  1. University of Antwerp (RUCA), Groenenborgerlaan 171, B2020, Antwerp, Belgium

    G. Van Tendeloo, C. Goessens, D. Schryvers, J. Van Havenbergh, A. De Veirman & J. Van Landuyt

  2. AGFA GEVAERT N.V., Mortsel, Belgium

    J. Van Havenbergh

Authors
  1. G. Van Tendeloo
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  2. C. Goessens
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  3. D. Schryvers
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  4. J. Van Havenbergh
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  5. A. De Veirman
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  6. J. Van Landuyt
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Editor information

Editors and Affiliations

  1. Unité de Catalyse et Chimie des Matériaux Divisés, Université Catholique de Louvain, Place Croix du Sud, 2/17, 1348, Louvain-La-Neuve, Belgium

    P. Grange  & B. Delmon  & 

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© 1991 Elsevier Science Publishers Ltd

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Van Tendeloo, G., Goessens, C., Schryvers, D., Van Havenbergh, J., De Veirman, A., Van Landuyt, J. (1991). Electron Microscopy of Interfaces in New Materials. In: Grange, P., Delmon, B. (eds) Interfaces in New Materials. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3680-8_20

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  • DOI: https://doi.org/10.1007/978-94-011-3680-8_20

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-85166-693-5

  • Online ISBN: 978-94-011-3680-8

  • eBook Packages: Springer Book Archive

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