Abstract
The patterning of diamond films is required in many applications, in particular, in fabrication of diamond-based electronic devices. We report on the use of low power (≈2 W) continuous wave Ar + laser for etching (engraving) of diamond films via laser-induced local oxidation reaction. Smooth fine-grained diamond films of about 10 μm thickness have been grown on Mo and Si substrates in a DC arc discharge using CH4/H2 gas mixtures. The sharply focussed laser beam was scanned under a computer control over the film surface causing the diamond oxidation in air or pure oxygen atmosphere. Various trenches and holes of a few microns size have been produced at high etch rate.
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Ralchenko, V.G., Korotushenko, K.G., Smolin, A.A., Obraztsova, E.D., Loubnin, E.N. (1995). Laser-Assisted Chemical Etching of Diamond Films in Oxygen. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_21
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DOI: https://doi.org/10.1007/978-94-011-0173-8_21
Publisher Name: Springer, Dordrecht
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