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Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics

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Simulation of Semiconductor Devices and Processes

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Abstract

This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (I d - V d). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(V g). We found that: (1) for I d –V d characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated I su b -C V g characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula P ii = P 0((E - 1.12)/1.12)n with n of 7 and P 0 of 2.8 × 1011 s -1 was used as the formula for the impact ionization rate.

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Author information

Authors and Affiliations

  1. Yokohama Technology Center, Sony Corporation, 134 Goudo, Hodogaya, Yokohama, Kanagawa, 240, Japan

    S. Imanaga, K. Hane & Y. Hayafuji

Authors
  1. S. Imanaga
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  2. K. Hane
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  3. Y. Hayafuji
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Imanaga, S., Hane, K., Hayafuji, Y. (1993). Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_117

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_117

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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