Abstract
Hybrid Nano (e.g. Nanotube and Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore’s law. A functional simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors (OG-CNTFET), which can be used as 2-terminal programmable resistors. Their resistance can be adjusted precisely, reproducibly and in a non-volatile way, over three orders of magnitude. These interesting behaviors of OG-CNTFET promise great potential for developing the non-volatile memory and neuromorphic adaptive computing circuits. The model is developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.1.41 simulator. Many experimental parameters are included in this model to improve the simulation accuracy.
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© 2009 ICST Institute for Computer Science, Social Informatics and Telecommunications Engineering
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Zhao, W., Agnus, G., Derycke, V., Filoramo, A., Gamrat, C., Bourgoin, JP. (2009). Functional Model of Carbon Nanotube Programmable Resistors for Hybrid Nano/CMOS Circuit Design. In: Schmid, A., Goel, S., Wang, W., Beiu, V., Carrara, S. (eds) Nano-Net. NanoNet 2009. Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-04850-0_16
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DOI: https://doi.org/10.1007/978-3-642-04850-0_16
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