Abstract
We present a prominent example how the influence of high magnetic fields can lead to spectacular field induced effects in a semiconductor nanostructure. We observe current steps in the I–V characteristics of a GaAs-AlAs tunnelling structure with self-assembled InAs quantum dots embedded in the AlAs barrier. The steps originate from resonant tunnelling through individual InAs quantum dots. In a magnetic field the Zeeman splitting of the quantized dot states leads to a splitting of each current step in two. The Landé factor deduced from these measurements is in the range g = 0.6... 1.5 depending on the size of the dot and the orientation of the magnetic field. In high magnetic fields (B > 20 T) the current steps evolve into extremely enhanced peaks. The effect observed is explained by a field induced Fermi-edge singularity caused by the Coulomb interaction between the tunnelling electron on the quantum dot and the partly spin-polarized Fermi sea in the Landau quantized three-dimensional emitter.
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Zeitler, U. et al. (2002). High Magnetic Fields in Semiconductor Nanostructures: Spin Effects in Single InAs Quantum Dots. In: Kramer, B. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 42. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45618-X_1
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DOI: https://doi.org/10.1007/3-540-45618-X_1
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