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Abstract

The aim of this chapter is to convey the basic principles of X-ray and electron diffraction, as used in the structural characterization of semiconductor heterostructures. A number of key concepts associated with radiation–material and particle–material interactions are introduced, with emphasis placed on the nature of the signal used for sample interrogation. Various modes of imaging and electron diffraction are then described, followed by a brief appraisal of the main techniques used to prepare electron-transparent membranes for TEM analysis. A number of case studies on electronic and photonic material systems are then presented in the context of a growth or device development program; these emphasize the need to use complementary techniques when characterizing a given heterostructure.

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Abbreviations

AEM:

analytical electron microscopes

CAIBE:

chemically assisted ion beam etching

CBED:

convergent beam electron diffraction

CCD:

charge-coupled device

CL:

cathodoluminescence

CVD:

chemical vapor deposition

EBIC:

electron beam induced conductivity

EELS:

electron energy loss spectroscopy

FIB:

focused ion beam

FWHM:

full-width at half-maximum

HAADF:

high-angle annular dark field

HOLZ:

high-order Laue zone

LEIS:

low-energy ion scattering

MBE:

molecular beam epitaxy

MEED:

medium-energy electron diffraction

MOCVD:

metal-organic chemical vapor deposition

RBS:

Rutherford backscattering

RHEED:

reflection high-energy electron diffraction

SE:

spontaneous emission

SEM:

scanning electron microscope

SIMS:

secondary ion mass spectrometry

TED:

transient enhanced diffusion

TED:

transmission electron diffraction

TEM:

transmission electron microscope

WDX:

wavelength dispersive X-ray

XPS:

X-ray photon spectroscopy

XRD:

X-ray diffraction

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Correspondence to Paul Brown Ph.D. .

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© 2006 Springer-Verlag

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Brown, P. (2006). Structural Characterization. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_17

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