Skip to main content
SpringerLink
Log in

Preparation of Ta-O-Based Tunnel Junctions to Obtain Artificial Synapses Based on Memristive Switching

  • Protocol
  • First Online:
Artificial Neural Networks

Part of the book series: Methods in Molecular Biology ((MIMB,volume 1260))

Abstract

Magnetron sputtering and optical lithography are standard techniques to prepare magnetic tunnel junctions with lateral dimensions in the micrometer range. Here we present the materials and techniques to deposit the layer stacks, define the structures, and etch the devices. In the end, we obtain tunnel junction devices exhibiting memristive switching for potential use as artificial synapses.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Protocol
USD 49.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 99.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 129.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 199.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Thomas A (2013) Memristor-based neural networks. J Phys D Appl Phys 46(9):093001. doi:10.1088/0022-3727/46/9/093001

    Article  CAS  Google Scholar 

  2. Turel O, Lee J, Ma X et al (2004) Neuromorphic architectures for nanoelectronic circuits. Int J Circ Theor Appl 32(5):277–302. doi:10.1002/cta.282

    Article  Google Scholar 

  3. Chua L (1971) Memristor: the missing circuit element. IEEE Trans Circ Theor 18:507–519

    Article  Google Scholar 

  4. Krzysteczko P, Münchenberger J, Schäfers M et al (2012) The memristive magnetic tunnel junction as a nanoscopic synapse-neuron system. Adv Mater 24:762–766

    Article  CAS  PubMed  Google Scholar 

  5. Afifi A, Ayatollahi A, Raissi F (2009) STDP implementation using memristive nanodevice in CMOS-Nano neuromorphic networks. IEICE Electron Exp 6(3):148–153. doi:10.1587/elex.6.148

    Article  Google Scholar 

  6. Indiveri G, Chicca E, Douglas R (2006) A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity. IEEE Trans Neural Netw 17(1):211–221. doi:10.1109/TNN.2005.860850

    Article  PubMed  Google Scholar 

  7. Krzysteczko P, Reiss G, Thomas A (2009) Memristive switching of MgO based magnetic tunnel junctions. Appl Phys Lett 95(11):112508. doi:10.1063/1.3224193

    Article  Google Scholar 

  8. Yang JJ, Zhang MX, Strachan JP et al (2010) High switching endurance in TaOx memristive devices. Appl Phys Lett 97(23):232102. doi:10.1063/1.3524521

    Article  Google Scholar 

  9. Strachan JP, Torrezan AC, Medeiros-Ribeiro G et al (2011) Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology 22(50):505402. doi:10.1088/0957-4484/22/50/505402

    Article  PubMed  Google Scholar 

  10. Torrezan AC, Strachan JP, Medeiros-Ribeiro G et al (2011) Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology 22(48):485203. doi:10.1088/0957-4484/22/48/485203

    Article  PubMed  Google Scholar 

  11. Yakopcic C, Sarangan A, Gao J et al. (2011) TiO2 memristor devices. IEEE National Aerospace & Electronics Conference, July 2011, p 101–104

    Google Scholar 

  12. Pickett MD, Strukov DB, Borghetti JL et al (2009) Switching dynamics in titanium dioxide memristive devices. J Appl Phys 106(7):074508. doi:10.1063/1.3236506

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Thin films and Physics of Nanostructures, Physics Department, Bielefeld University, Bielefeld, Germany

    Stefan Niehörster & Andy Thomas

  2. Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany

    Andy Thomas

Authors
  1. Stefan Niehörster
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Andy Thomas
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Andy Thomas .

Editor information

Editors and Affiliations

  1. Chemistry Department, Oxford University, UK, and University of Victoria, Victoria, British Columbia, Canada

    Hugh Cartwright

Rights and permissions

Reprints and permissions

Copyright information

© 2015 Springer Science+Business Media New York

About this protocol

Cite this protocol

Niehörster, S., Thomas, A. (2015). Preparation of Ta-O-Based Tunnel Junctions to Obtain Artificial Synapses Based on Memristive Switching. In: Cartwright, H. (eds) Artificial Neural Networks. Methods in Molecular Biology, vol 1260. Springer, New York, NY. https://doi.org/10.1007/978-1-4939-2239-0_16

Download citation

  • DOI: https://doi.org/10.1007/978-1-4939-2239-0_16

  • Published:

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4939-2238-3

  • Online ISBN: 978-1-4939-2239-0

  • eBook Packages: Springer Protocols

Publish with us

Policies and ethics

Search

Navigation