Photomodulated Optical Reflectance

1. Front Matter

   Pages i-xxiii

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2. Introduction

   • Janusz Bogdanowicz

   Pages 1-20

3. Theory of Perturbation of the Reflectance

   • Janusz Bogdanowicz

   Pages 21-37

4. Theory of Perturbation of the Refractive Index

   • Janusz Bogdanowicz

   Pages 39-51

5. Theory of Carrier and Heat Transport in Homogeneously Doped Silicon

   • Janusz Bogdanowicz

   Pages 53-99

6. Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers

   • Janusz Bogdanowicz

   Pages 101-113

7. Assessment of the Model

   • Janusz Bogdanowicz

   Pages 115-139

8. Application of the Model to Carrier Profiling

   • Janusz Bogdanowicz

   Pages 141-171

9. Conclusions and Recommendations

   • Janusz Bogdanowicz

   Pages 173-178

10. Back Matter

    Pages 179-201

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One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.

• Dopant and Carrier Profiling
• Electrooptical and Electrothermal Effects
• Non-destructive Semiconductor Testing
• Ultra-shallow Junction Characterization
• carrier and Heat Transport in Highly Injected Semiconductors

• University of Leuven, Leuven, Belgium

  Janusz Bogdanowicz

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