Transistor Level Modeling for Analog/RF IC Design

1. Front Matter

   Pages i-xii

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2. 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures

   • Daniel Donoval, Andrej Vrbicky, Ales Chvala, Peter Beno

   Pages 1-27

3. PSP: An advanced surface-potential-based MOSFET model

   • R.van Langevelde, G. Gildenblat

   Pages 29-66

4. EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model

   • Matthias Bucher, Antonios Bazigos, François Krummenacher, Jean-Micehl Sallese, Christian Enz

   Pages 67-95

5. Modelling using high-frequency measurements

   • DOMINIQUE SCHREURS

   Pages 97-119

6. Empirical FET models

   • Iltcho Angelov

   Pages 121-155

7. Modeling the SOI MOSFET nonlinearities. An empirical approach

   • B. Parvais, A. Siligaris

   Pages 157-180

8. Circuit level RF modeling and design

   • Nobuyuki Itoh

   Pages 181-207

9. On incorporating parasitic quantum effects in classical circuit simulations

   • Frank Felgenhauer, Maik Begoin, Wolfgang Mathis

   Pages 209-241

10. Compact modeling of the MOSFET in VHDL-AMS

    • Christophe Lallement, François Pêcheux, Alain Vachoux, Fabien Prégaldiny

    Pages 243-269

11. Compact modeling in Verilog-A

    • Boris Troyanovsky, Patrick O'Halloran, Marek Mierzwinski

    Pages 271-291

12. Back Matter

    Pages 292-292

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Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of integrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The ?rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device models. However, the capability of the computer and accuracy of the model were far from satisfactory, and there are many cases of the necessity of circuit re-design after evaluation of the ?rst chip. The second wave hit us in the middle of 1980s, when the EWS (Engine- ing Work Station) was introduced for use by designers.

• Hardware
• Leistungsfeldeffekttransistor
• MOSFET
• Potential
• Standard
• VHDL
• Verilog
• analog
• field-effect transistor
• metal oxide semiconductur field-effect transistor
• model
• modeling
• semiconductor
• simulation
• transistor

"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits." 
Narain Arora, Cadence Design Systems, California, USA

"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else." 
Peter Bendix, Xpedion Design Systems, California, USA

• Freescale, Switzerland

  WLADYSLAW GRABINSKI

• Belgium

  BART NAUWELAERS

• Leuven, Belgium

  DOMINIQUE SCHREURS

Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.

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