Overview
- To the best of our knowledge, this is the first focused collection of papers on DEFECTS in high-k dielectrics materials
- State-of-the-art reviews from leading experts in the field of high-k dielectrics
- Covered from different angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory
Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry (NAII, volume 220)
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Table of contents (38 papers)
Keywords
About this book
Editors and Affiliations
Bibliographic Information
Book Title: Defects in HIgh-k Gate Dielectric Stacks
Book Subtitle: Nano-Electronic Semiconductor Devices
Editors: Evgeni Gusev
Series Title: NATO Science Series II: Mathematics, Physics and Chemistry
DOI: https://doi.org/10.1007/1-4020-4367-8
Publisher: Springer Dordrecht
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media B.V. 2006
Hardcover ISBN: 978-1-4020-4365-9Published: 27 January 2006
Softcover ISBN: 978-1-4020-4366-6Published: 27 January 2006
eBook ISBN: 978-1-4020-4367-3Published: 15 February 2006
Series ISSN: 1568-2609
Edition Number: 1
Number of Pages: XI, 492
Topics: Electrical Engineering, Condensed Matter Physics, Engineering, general, Electronics and Microelectronics, Instrumentation