1. Foreword

   • P Rama Rao
   • D N Bose

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 1 - 2

2. Bulk growth of polycrystalline indium phosphide

   • J N Roy

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 3 - 9

3. Growth of III–V compounds by liquid phase epitaxy

   • B M Arora

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 11 - 26

4. Bulk growth of gallium antimonide crystals by Bridgman method

   • U N Roy
   • S Basu

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 27 - 32

5. An investigation of the growth of In_0·53Ga_0·47As layers on InP by liquid phase epitaxy

   • S Dhar
   • Mala Mitra
   • B R Nag

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 33 - 36

6. LPE growth of InGaAsP:InP high purity layers using rare earth elements

   • R K Sarin
   • A T Gorelenok
   • V I Korolkov

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 37 - 41

7. Electrodeposition kinetics of gallium arsenide

   • S Moorthy Babu
   • L Durai
   • P Ramasamy

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 43 - 49

8. Ion implantation and laser treatment of III–V compound semiconductor: A brief report

   • S B Ogale

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 51 - 56

9. Hot electron transport in In (0·53) Ga (0·47) As

   • B R Nag

   First National Seminar On GaAs And III–V Compound Semiconductors Pages: 57 - 63

10. Some key properties of low-dimensional electron gas in semiconductors

    • P K Basu

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 65 - 74

11. Photoluminescence and heavy doping effects in InP

    • Seishu Bendapudi
    • D N Bose

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 75 - 82

12. Characterization of defects in gallium arsenide

    • Vikram Kumar
    • Y N Mohapatra

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 83 - 88

13. Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

    • A Sen Gupta

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 89 - 94

14. Multiple implantation of²⁹Si⁺ in semi-insulating GaAs and its characterisation

    • M B Dutt
    • R Nath
    • Y P Khosla

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 95 - 98

15. GaAs MESFET and related processes

    • O P Daga
    • J K Singh
    • W S Khokle

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 99 - 112

16. Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies

    • S K Roy
    • J P Banerjee

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 113 - 119

17. High electron mobility transistors

    • S Subramanian

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 121 - 133

18. Gallium arsenide digital integrated circuits

    • D Bhattacharya

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 135 - 150

19. Semiconductor lasers for optical communication

    • A K Srivastava

    First National Seminar On GaAs And III–V Compound Semiconductors Pages: 151 - 159