Volume 42, Issue 1, January 2013

ISSN: 0361-5235 (Print) 1543-186X (Online)

In this issue (26 articles)

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  1. No Access

    BriefCommunication

    Quantum Transport Properties of Graphene Nanoribbons with Defects and Dephasing Scattering Processes

    Guo-Ya Sun, Yue-jin Zhu Pages 1-9
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  2. No Access

    OriginalPaper

    Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

    Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu Pages 10-14
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  3. OriginalPaper

    The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

    Michele Esposto, Valerio Di Lecce, Matteo Bonaiuti… Pages 15-20
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  4. OriginalPaper

    Implantation Studies on Silicon-Doped GaN

    Ronnie Simon, Reiner Vianden, Klaus Köhler Pages 21-25
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    OriginalPaper

    Microstructure of GaN1−x Bi x

    Z. Liliental-Weber, R. Dos Reis, A.X. Levander, K.M. Yu… Pages 26-32
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    OriginalPaper

    Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

    Xiang Liu, Ramya Yeluri, Jing Lu, Umesh K. Mishra Pages 33-39
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  7. OriginalPaper

    Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

    Jayesh Bharathan, Jagdish Narayan, George Rozgonyi… Pages 40-46
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    OriginalPaper

    Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance

    M. Miralaie, M. Leilaeioun, K. Abbasian Pages 47-57
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  9. No Access

    OriginalPaper

    Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

    Raad Chegel, Somayeh Behzad Pages 58-70
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    OriginalPaper

    Properties of the Mo Back Contact for the Formation of a Thin-Film Photovoltaic Absorber

    S.S. Wang, C.Y. Hsu, F.J. Shiou, P.C. Huang, D.C. Wen Pages 71-77
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    OriginalPaper

    Evolution of the Structural and Electrical Properties of GeTe Under Different Annealing Conditions

    Ki-Hong Kim, Yong-Koo Kyoung, Jun-Ho Lee, Yong-Nam Ham… Pages 78-82
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    OriginalPaper

    Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization

    S. Kincal, G.B. Basim Pages 83-96
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  13. No Access

    OriginalPaper

    Experimental Evaluation of the Effect of Pad Debris Size on Microscratches during CMP Process

    Ji Chul Yang, Hojoong Kim, Dong Won Oh, Jai-Hyung Won… Pages 97-102
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    OriginalPaper

    Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes

    M. Gökçen Pages 103-108
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    OriginalPaper

    Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb3

    Taichao Su, Chunyuan He, Hongtao Li, Xin Guo… Pages 109-113
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    OriginalPaper

    High-Temperature Thermoelectric Properties of Compounds in the System Zn x In y O x+1.5y

    Matin Amani, Ian M. Tougas, Otto J. Gregory… Pages 114-120
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    OriginalPaper

    Electronic Materials Based on Co0.5Zn0.5Fe2O4/Pb(Zr0.52Ti0.48)O3 Nanocomposites

    Avinandan Mandal, Chapal Kumar Das Pages 121-128
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  18. No Access

    OriginalPaper

    Synthesis of Nanocrystalline CaWO4 as Low-Temperature Co-fired Ceramic Material: Processing, Structural and Physical Properties

    S. Vidya, Sam Solomon, J.K. Thomas Pages 129-137
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    OriginalPaper

    Preparation, Characterization, and Microwave Dielectric Properties of Sr2La3Nb1−x Ta x Ti4O17 (0 ≤ x ≤ 1) Ceramics

    Abdul Manan, Ibrahim Qazi, Atta Ullah Pages 138-142
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  20. No Access

    OriginalPaper

    Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide–Electrode System Through First-Principles Calculations

    Susan Meñez Aspera, Hideaki Kasai, Hirofumi Kishi… Pages 143-150
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