1. Laser interferometric method for determining the carrier diffusion length in semiconductors

   • V. V. Manukhov
   • A. B. Fedortsov
   • A. S. Ivanov

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1119 - 1124

2. Negative differential conductivity in n-Si structures with contacts asymmetric in area

   • A. M. Musaev

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1125 - 1128

3. On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

   • G. P. Gaidar

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1129 - 1133

4. Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

   • N. K. Morozova
   • V. G. Galstyan
   • V. E. Mashchenko

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1134 - 1139

5. Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon ²⁹Si:B

   • O. V. Koplak
   • E. A. Shteynman
   • R. B. Morgunov

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1140 - 1144

6. On the band gap of Cu₂ZnSn(S _x Se_1–x )₄ alloys

   • I. V. Bodnar

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1145 - 1148

7. Specific features of the optical and photoelectric properties of nanocrystalline indium oxide

   • E. A. Forsh
   • P. A. Forsh
   • P. K. Kashkarov

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1149 - 1153

8. Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation

   • V. F. Bannaya

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1154 - 1159

9. Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation

   • V. F. Bannaya

   Electronic Properties of Semiconductors 03 September 2015 Pages: 1160 - 1162

10. Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)

    • V. V. Kozlovski
    • A. A. Lebedev
    • N. V. Seredova

    Electronic Properties of Semiconductors 03 September 2015 Pages: 1163 - 1165

11. Features of the electrical conductivity of TlInSe₂ under photoexcitation and X-ray excitation

    • R. S. Madatov
    • A. I. Najafov
    • I. M. Movsumova

    Electronic Properties of Semiconductors 03 September 2015 Pages: 1166 - 1169

12. Temperature dependence of the carrier lifetime in narrow-gap Cd _x Hg_1–x Te solid solutions: Radiative recombination

    • N. L. Bazhenov
    • K. D. Mynbaev
    • G. G. Zegrya

    Electronic Properties of Semiconductors 03 September 2015 Pages: 1170 - 1175

13. An origin of orange (2 eV) photoluminescence in SiO₂ films implanted with high Si⁺-ion doses

    • I. E. Tyschenko

    Spectroscopy, Interaction with Radiation 03 September 2015 Pages: 1176 - 1180

14. On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

    • O. S. Medvedev
    • O. F. Vyvenko
    • A. S. Bondarenko

    Spectroscopy, Interaction with Radiation 03 September 2015 Pages: 1181 - 1186

15. On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

    • V. B. Bondarenko
    • A. V. Filimonov

    Surfaces, Interfaces, and Thin Films 03 September 2015 Pages: 1187 - 1190

16. Controlled exciton transfer between quantum dots with acoustic phonons taken into account

    • P. A. Golovinski

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1191 - 1196

17. On the cascade capture of electrons at donors in GaAs quantum wells

    • V. Ya. Aleshkin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1197 - 1201

18. Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy

    • L. P. Avakyants
    • P. Yu. Bokov
    • A. V. Chervyakov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1202 - 1206

19. Photoluminescence properties of modulation-doped In _x Al_1–x As/In _y Ga_1–y As/In _x Al_1–x As structures with strained inas and gaas nanoinserts in the quantum well

    • G. B. Galiev
    • I. S. Vasil’evskii
    • P. P. Maltsev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1207 - 1217

20. Photoluminescence of heterostructures containing an In _x Ga_1–x As quantum well with a high in content at different excitation powers

    • D. V. Lavrukhin
    • R. A. Khabibullin
    • P. P. Maltsev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1218 - 1221

21. Defect-related luminescence in silicon p ⁺–n junctions

    • R. V. Kuzmin
    • N. T. Bagraev
    • A. M. Malyarenko

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1222 - 1225

22. Effect of hydrogen on the electrical characteristics of structural elements of the Pt/WO _x /6H-SiC

    • V. V. Zuev
    • R. I. Romanov
    • V. N. Nevolin

    Physics of Semiconductor Devices 03 September 2015 Pages: 1226 - 1236

23. Effect of catalytic surface modification on the gas sensitivity of SnO₂ + 3% SiO₂ films

    • S. I. Rembeza
    • E. S. Rembeza
    • V. M. K. Al Tameemi

    Physics of Semiconductor Devices 03 September 2015 Pages: 1237 - 1241

24. Characterization of field-emission cathodes based on graphene films on SiC

    • R. V. Konakova
    • O. B. Okhrimenko
    • O. B. Spiridonov

    Physics of Semiconductor Devices 03 September 2015 Pages: 1242 - 1245

25. Photodetectors based on single-walled carbon nanotubes and thiamonomethinecyanine J-aggregates on flexible substrates

    • I. V. Fedorov
    • A. V. Emel’yanov
    • I. I. Bobrinetskiy

    Physics of Semiconductor Devices 03 September 2015 Pages: 1246 - 1251