Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells A. V. AndrianovP. S. AlekseevA. O. Zakhar’in Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1433 - 1437
Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells V. V. RumyantsevA. V. IkonnikovN. N. Mikhailov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1438 - 1441
Simulation of ultraviolet- and soft X-ray-pulse generation as a result of cooperative recombination of excitons in diamond nanocrystals embedded in a polymer film V. A. Kukushkin Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1442 - 1446
Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells Yu. G. ArapovS. V. GudinaB. N. Zvonkov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1447 - 1451
Pseudomorphic GeSn/Ge (001) heterostructures A. A. TonkikhV. G. TalalaevP. Werner Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1452 - 1455
Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator A. A. SukhanovV. A. Sablikov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1456 - 1460
Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields S. V. MorozovV. V. RumyantsevD. V. Kozlov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1461 - 1464
Metastable-state formation as a possible mechanism for the conductance anomalies in mesoscopic structures V. A. Sablikov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1465 - 1469
Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping A. V. MurelV. M. DaniltsevV. I. Shashkin Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1470 - 1474
Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs V. Ya. AleshkinA. A. AfonenkoS. M. Nekorkin Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1475 - 1477
Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices M. S. KaganI. V. AltukhovA. A. Usikova Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1478 - 1480
Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy M. N. DrozdovA. V. NovikovD. V. Yurasov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1481 - 1484
Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas K. P. KalininS. S. KrishtopenkoB. N. Zvonkov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1485 - 1491
Exciton condensation in microcavities under three-dimensional quantization conditions V. P. KochereshkoA. V. PlatonovH. Mariette Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1492 - 1495
Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures A. N. YablonskiyN. A. BaidakovaD. N. Lobanov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1496 - 1499
Features of impurity photoconductivity in Si:Er/Si epitaxial diodes A. V. AntonovK. E. KudryavtsevZ. F. Krasilnik Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1500 - 1503
Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 μm S. V. MorozovD. I. KryzhkovO. I. Vikhrova Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1504 - 1507
Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals A. A. KonakovN. V. KurovaV. A. Burdov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1508 - 1512
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells M. Ya. VinnichenkoL. E. VorobjevG. Kipshidze Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 06 November 2013 Pages: 1513 - 1516
Features of the electroluminescence spectra of quantum-confined silicon p +-n heterojunctions in the infrared spectral region N. T. BagraevL. E. KlyachkinV. A. Mashkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2013 Pages: 1517 - 1522
Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix Ya. A. ParkhomenkoE. V. IvanovK. D. Moiseev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2013 Pages: 1523 - 1527
Efficient electro-optic semiconductor medium based on type-II heterostructures V. A. ShchukinN. N. LedentsovA. V. Savelyev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2013 Pages: 1528 - 1538
Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures A. A. LebedevM. V. ZamorianskayaM. P. Scheglov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2013 Pages: 1539 - 1543
