Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys P. V. SeredinP. DomashevskayaT. Prutskij Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 07 January 2013 Pages: 1 - 6
Properties of epitaxial (Al x Ga1 − x As)1 − y C y alloys grown by MOCVD autoepitaxy P. V. SeredinE. P. DomashevskayaA. L. Stankevich Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 07 January 2013 Pages: 7 - 12
Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase A. P. BelyaevV. P. RubetsV. V. Antipov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 07 January 2013 Pages: 13 - 15
Features of the energy spectrum and hole-scattering mechanisms in PbSb2Te4 S. A. NemovN. M. BlagikhL. E. Shelimova Electronic Properties of Semiconductors 07 January 2013 Pages: 16 - 21
On the lifetime of charge carriers in quantum dots at low temperatures D. M. SamosvatV. P. EvtikhievG. G. Zegrya Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 22 - 27
Two-color luminescence from a single type-II InAsSbP/InAs heterostructure M. M. GrigoryevP. A. AlekseevK. D. Moiseev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 28 - 32
Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas D. Yu. ProtasovT. V. MalinK. S. Zhuravlev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 33 - 44
Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells V. F. AgekyanA. Yu. SerovG. Karczewski Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 45 - 49
Lateral growth and shape of semiconductor nanowires V. G. DubrovskiiM. A. TimofeevaA. D. Bolshakov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 50 - 57
Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures M. V. BaranovskiyG. F. GlinskiiM. S. Mironova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 58 - 62
Optical resonance identification of long-range electron tunneling between superlattice levels in an electric field A. A. AndronovE. P. DodinYu. N. Nozdrin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 63 - 65
On the theory of the photoelectric effect in surface-graded-gap semiconductors V. A. Kholodnov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 66 - 72
Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers K. V. KalininaM. P. MikhailovaYu. P. Yakovlev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 73 - 80
Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes P. A. IvanovN. D. Il’inskayaV. A. Il’in Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 81 - 84
Optical anisotropy of InGaAs quantum dots S. A. BlokhinA. M. NadtochiyV. M. Ustinov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 January 2013 Pages: 85 - 89
Study of the structure of a-As2Se3〈Bi〉 x amorphous layers by dielectric spectroscopy N. I. AnisimovaV. A. BordovskyR. A. Kastro Amorphous, Vitreous, and Organic Semiconductors 07 January 2013 Pages: 90 - 94
On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates S. Yu. Davydov Carbon Systems 07 January 2013 Pages: 95 - 104
Optical spectroscopy of thin C60:CdS composite films I. B. ZakharovaV. M. ZiminovA. N. Aleshin Carbon Systems 07 January 2013 Pages: 105 - 109
Edge electroluminescence in small-area silicon p +-n diodes heavily doped with boron: Analysis of model representations A. M. Emel’yanov Physics of Semiconductor Devices 07 January 2013 Pages: 110 - 115
Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor V. S. YuferevM. E. LevinshteinJ. W. Palmour Physics of Semiconductor Devices 07 January 2013 Pages: 116 - 121
Semiconductor lasers with internal wavelength selection V. V. ZolotarevA. Yu. LeshkoI. S. Tarasov Physics of Semiconductor Devices 07 January 2013 Pages: 122 - 126
Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes N. I. BochkarevaV. V. VoronenkovYu. G. Shreter Physics of Semiconductor Devices 07 January 2013 Pages: 127 - 134
Acoustoelectron interaction in quantum laser heterostructures L. A. KulakovaN. S. AverkievV. A. Gorelov Physics of Semiconductor Devices 07 January 2013 Pages: 135 - 140
Features of the time evolution of localized quantum states in graphene M. J. MajidS. S. Savinskii XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 141 - 145
Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures M. Ya. VinnichenkoD. A. FirsovG. Belenky XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 146 - 151
Modeling of high-power HEMT irradiated with high-energy photons E. A. TarasovaD. S. DemidovaD. I. Ducov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 152 - 157
MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics N. V. BaidusA. A. BiryukovA. A. Andronov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 158 - 161
Analysis of the temperature dependence of the capacitance-voltage characteristics of InGaN/GaN multiple quantum well light-emitting structures O. A. SoltanovichE. B. Yakimov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 162 - 168
Temperature renormalization of the conduction electron g factor in silicon A. A. KonakovV. A. BurdovS. A. Popkov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 169 - 173
Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation V. V. VainbergV. M. VasetskiiB. N. Zvonkov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 174 - 177
Photoluminescence in dense arrays of silicon nanocrystals: the role of the concentration and average size V. A. BelyakovK. V. SydorenkoV. A. Burdov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 07 January 2013 Pages: 178 - 182