1. Infrared luminescence from silicon nanostructures heavily doped with boron

   • N. T. Bagraev
   • L. E. Klyachkin
   • V. A. Mashkov

   Review 16 March 2012 Pages: 275 - 288

2. Concerning the energy levels of silver in Ge-Si alloys

   • V. I. Tahirov
   • Z. A. Agamaliev
   • N. F. Gahramanov

   Electronic Properties of Semiconductors 16 March 2012 Pages: 289 - 292

3. Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd _x Hg_{1 − x} Te

   • S. A. Aliev
   • E. I. Zulfigarov
   • R. I. Selim-zade

   Electronic Properties of Semiconductors 16 March 2012 Pages: 293 - 297

4. Influence of samarium on the thermoelectric figure of merit of Sm _x Pb_{1 − x} Te alloys

   • F. F. Aliev
   • H. A. Hasanov

   Electronic Properties of Semiconductors 16 March 2012 Pages: 298 - 301

5. Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films

   • A. E. Belyaev
   • N. I. Klyui
   • A. N. Klyui

   Electronic Properties of Semiconductors 16 March 2012 Pages: 302 - 305

6. Influence of technological defects on the optical and photoelectric properties of AgCd_{2 − x} Mn _x GaSe₄ alloys

   • A. P. Tretyak
   • H. Ye. Davydyuk
   • O. V. Parasyuk

   Electronic Properties of Semiconductors 16 March 2012 Pages: 306 - 311

7. The effect of irradiation with electrons on the electrical parameters of Hg₃In₂Te₆

   • O. G. Grushka
   • V. T. Maslyuk
   • I. I. Zabolotskiy

   Electronic Properties of Semiconductors 16 March 2012 Pages: 312 - 314

8. Specific features of recombination in layered a-Si:H films

   • I. A. Kurova
   • N. N. Ormont

   Electronic Properties of Semiconductors 16 March 2012 Pages: 315 - 318

9. Current-voltage characteristics of MnGa₂Se₄ single crystals

   • B. G. Tagiev
   • O. V. Tagiev
   • Q. Y. Eyyubov

   Electronic Properties of Semiconductors 16 March 2012 Pages: 319 - 322

10. Effect of erbium fluoride doping on the photoluminescence of SiO _x films

    • N. A. Vlasenko
    • N. V. Sopinskii
    • M. A. Mukhlyo

    Spectroscopy, Interaction with Radiation 16 March 2012 Pages: 323 - 329

11. Temperature dependence of contact resistance for Au-Ti-Pd₂Si-n ⁺-Si ohmic contacts subjected to microwave irradiation

    • A. E. Belyaev
    • N. S. Boltovets
    • A. O. Vinogradov

    Surfaces, Interfaces, and Thin Films 16 March 2012 Pages: 330 - 333

12. Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density

    • A. V. Sachenko
    • A. E. Belyaev
    • M. A. Yagovkina

    Surfaces, Interfaces, and Thin Films 16 March 2012 Pages: 334 - 341

13. Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga₂O₃/p-GaSe〈KNO₃〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

    • A. P. Bakhtinov
    • V. N. Vodopyanov
    • O. S. Lytvyn

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 March 2012 Pages: 342 - 353

14. Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry

    • D. M. Zhigunov
    • N. V. Shvydun
    • V. N. Seminogov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 March 2012 Pages: 354 - 359

15. Mapping of two-photon luminescence amplification in zinc-oxide microstructures

    • S. V. Semin
    • N. E. Sherstyuk
    • L. -H. Peng

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 March 2012 Pages: 360 - 362

16. A problem on a dimer adsorbed at single-sheet graphene

    • S. Yu. Davydov

    Carbon Systems 16 March 2012 Pages: 363 - 368

17. AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films

    • I. P. Smirnova
    • L. K. Markov
    • M. V. Kukushkin

    Physics of Semiconductor Devices 16 March 2012 Pages: 369 - 373

18. Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors

    • L. A. Kosyachenko
    • V. M. Sklyarchuk
    • O. V. Sklyarchuk

    Physics of Semiconductor Devices 16 March 2012 Pages: 374 - 381

19. Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si₃N₄ by CDLTS

    • M. Gassoumi
    • B. Grimbert
    • H. Maaref

    Physics of Semiconductor Devices 16 March 2012 Pages: 382 - 385

20. An analytical gate tunneling current model for MOSFETs

    • Iman Abaspur Kazerouni
    • Seyed Ebrahim Hosseini

    Physics of Semiconductor Devices 16 March 2012 Pages: 386 - 390

21. Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiation

    • I. M. Gazizov
    • V. M. Zaletin
    • I. S. Lisitsky

    Physics of Semiconductor Devices 16 March 2012 Pages: 391 - 396

22. Leakage currents in 4H-SiC JBS diodes

    • P. A. Ivanov
    • I. V. Grekhov
    • N. Sleptsuk

    Physics of Semiconductor Devices 16 March 2012 Pages: 397 - 400

23. Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors

    • V. Y. Fominski
    • S. N. Grigoriev
    • V. V. Grigoriev

    Fabrication, Treatment, and Testing of Materials and Structures 16 March 2012 Pages: 401 - 409

24. Pulsed laser deposition of ITO thin films and their characteristics

    • D. A. Zuev
    • A. A. Lotin
    • A. M. Gaskov

    Fabrication, Treatment, and Testing of Materials and Structures 16 March 2012 Pages: 410 - 413