Photoconductivity of pyrolytic CdS films alloyed with Cs T. L. MaiorovaV. G. KluyevT. V. Samofalova Electronic Properties of Semiconductors 15 May 2011 Pages: 567 - 571
Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals T. A. PagavaN. I. MaisuradzeM. G. Beridze Electronic Properties of Semiconductors 15 May 2011 Pages: 572 - 576
Theoretical investigations of the g factors and the hyperfine structure constants of the Cr4+ and Mn5+ centrs in silicon Zhi-Hong ZhangShao-Yi WuPei Xu Electronic Properties of Semiconductors 15 May 2011 Pages: 577 - 581
Charge spectroscopy of SiO2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions I. V. AntonovaS. A. SmagulovaI. Balberg Spectroscopy, Interaction with Radiation 15 May 2011 Pages: 582 - 586
Electronic states on silicon surface after deposition and annealing of SiO x films N. A. VlasenkoP. F. OleksenkoM. A. Mukhlyo Surfaces, Interfaces, and Thin Films 15 May 2011 Pages: 587 - 592
The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors A. Konin Surfaces, Interfaces, and Thin Films 15 May 2011 Pages: 593 - 598
The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures B. V. PavlykA. S. HrypaR. I. Didyk Surfaces, Interfaces, and Thin Films 15 May 2011 Pages: 599 - 602
Electrical and gas-sensitive properties of nanostructured SnO2:ZrO2 semiconductor films S. I. RembezaN. N. KoshelevaGang Xu Surfaces, Interfaces, and Thin Films 15 May 2011 Pages: 603 - 606
Photosensitive structures based on CuIn5Te8 single crystals: Development and properties I. V. BodnarV. Yu. RudA. M. Kovalchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 May 2011 Pages: 607 - 610
Study of dielectric processes in (As2Se3)1 − x Bi x amorphous films R. A. KastroG. I. Grabko Amorphous, Vitreous, and Organic Semiconductors 15 May 2011 Pages: 611 - 613
Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon K. A. GoncharG. K. MusabekV. Yu. Timoshenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 May 2011 Pages: 614 - 617
On charge transfer in the adsorbed molecules-graphene monolayer-SiC substrate system S. Yu. Davydov Carbon Systems 15 May 2011 Pages: 618 - 622
Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation A. A. LebedevN. V. AgrinskayaD. V. Shamshur Carbon Systems 15 May 2011 Pages: 623 - 627
Absolute negative conductivity of graphene with impurities in magnetic field M. B. BelonenkoN. G. LebedevM. M. Shakirzyanov Carbon Systems 15 May 2011 Pages: 628 - 632
Insulator band gap in graphane nanoribbons L. A. OpenovA. I. Podlivaev Carbon Systems 15 May 2011 Pages: 633 - 635
Current response of a TlBr detector to 137Cs γ-ray radiation I. M. GazizovV. M. ZaletinV. S. Khrunov Physics of Semiconductor Devices 15 May 2011 Pages: 636 - 640
Simultaneous TE1 and TE2 mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction V. Ya. AleshkinT. S. BabushkinaS. M. Nekorkin Physics of Semiconductor Devices 15 May 2011 Pages: 641 - 645
A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) Jung-Hui TsaiChing-Sung LeeSheng-Shiun Ye Physics of Semiconductor Devices 15 May 2011 Pages: 646 - 649
Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT T. R. LenkaA. K. Panda Physics of Semiconductor Devices 15 May 2011 Pages: 650 - 656
Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures R. A. KhabibullinI. S. Vasil’evskiiN. A. Uzeeva Physics of Semiconductor Devices 15 May 2011 Pages: 657 - 662
Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser S. O. SlipchenkoA. A. PodoskinI. S. Tarasov Physics of Semiconductor Devices 15 May 2011 Pages: 663 - 667
High-voltage (3.3 kV) 4H-SiC JBS diodes P. A. IvanovI. V. GrekhovO. U. Serebrennikova Physics of Semiconductor Devices 15 May 2011 Pages: 668 - 672
Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures S. O. SlipchenkoA. A. PodoskinI. S. Tarasov Physics of Semiconductor Devices 15 May 2011 Pages: 673 - 678
Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions A. M. NadtochiyS. A. BlokhinD. Bimber Physics of Semiconductor Devices 15 May 2011 Pages: 679 - 684
Ion implantation of platinum from pulsed laser plasma for fabrication of a hydrogen detector based on an n-6H-SiC crystal V. Yu. FominskiiR. I. RomanovV. V. Grigoriev Fabrication, Treatment, and Testing of Materials and Structures 15 May 2011 Pages: 685 - 692
Fabrication of por-Si/SnO x nanocomposite layers for gas microsensors and nanosensors V. V. BolotovP. M. KorusenkoI. V. Ponomareva Fabrication, Treatment, and Testing of Materials and Structures 15 May 2011 Pages: 693 - 698
The influence of substrate temperature on the structural and optical properties of ZnS thin films M. AshrafS. M. J. AkhtarA. Qayyum Fabrication, Treatment, and Testing of Materials and Structures 15 May 2011 Pages: 699 - 702